Recent Progressive Use of Advanced Atomic Force Microscopy in Polymer Science: A Review

Nguyen‐Tri, Phuong; Ghassemin, Payman; Carriere, Pascal; Assadi, Aymen Amine; Nguyen, Dinh Duc

doi:10.20944/preprints202003.0082.v1

Cited by 12 publications

(2 citation statements)

References 132 publications

(174 reference statements)

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“…There will be less layers to remove with the top-down approach. the applications can range from biology to material science [50,51].…”

Section: Approaching the Resistive Switching Layermentioning

confidence: 99%

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Investigation on the security of stored data in emerging non-volatile memory devices using AFM- based techniques

Tay¹

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Nowadays, non-volatile memory (NVM) devices are extensively used for information storage in artificial intelligence, communication, transportation, mobile and many other applications. With their intended use in these applications, it is important to evaluate the security of stored data in these devices against extraction or modification. Hardware security analysis includes physical attacks and software attacks. Prior studies have been conducted on NVMs such as Flash and EEPROM devices using Atomic Force Microscopy (AFM) based techniques. AFM is a versatile tool that can measure different material properties along with topography and morphology information. This makes it suitable for the investigation on the emerging NVMs such as magnetic random-access memory (MRAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) in the market.In this study, RRAM and MRAM devices that are available in the market will first be analyzed through the use of failure analysis techniques such as chemical deprocessing, Xray imaging and scanning electron microscopy (SEM) with focused ion beam (FIB) to understand its device architecture. Next, deprocessing steps such as chemical etching and reactive ion etching will be developed to access the data storage layer of the RRAM/MRAM where the devices store their data depending on the resistance state, which corresponds to the binary bit of '1' or '0'. Then, the AFM technique such as conductive probe AFM (CP-AFM), using a constant dc bias, will be used to scan across the sample's surface and directly probe on the data storage layer to measure the current and thus its resistance. The collected results from the current scans will be validated with the input data in order to assess the accuracy of the technique. Precaution measures adopted to prevent the loss of data during the sample preparation process will also be discussed. The first ever successful readout of data in RRAM samples using CP-AFM has been achieved and block level data organization of the memory is also presented in this study, thus demonstrating the vulnerability of RRAM devices to security attacks, and potentially MRAM technology as well.

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“…There will be less layers to remove with the top-down approach. the applications can range from biology to material science [50,51].…”

Section: Approaching the Resistive Switching Layermentioning

confidence: 99%

“…Hence, tapping mode can be used to image samples that are easily damaged or difficult to image. [50,52,53] Understanding the advantages and disadvantages of each mode is important when selecting a suitable AFM technique for the information that needs to be extracted. As mentioned before, different forces are acting on the tip.…”

Section: Afm Modesmentioning

confidence: 99%

Investigation on the security of stored data in emerging non-volatile memory devices using AFM- based techniques

Tay¹

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Nanoscale characterization of cementitious composites

Özçelikci

İlcan

Yıldırım

et al. 2022

Recent Advances in Nano-Tailored Multi-Functional Cementitious Composites

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Improving Transverse Compressive Modulus of Carbon Fibers during Wet Spinning of Polyacrylonitrile

Wong

Hillbrick

Kaur

et al. 2022

Fibers

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The performance of carbon fibers depends on the properties of the precursor polyacrylonitrile (PAN) fibers. Stretching of PAN fibers results in improved tensile properties, while potentially reducing its compressive properties. To determine optimization trade-offs, the effect of coagulation conditions and the stretching process on the compressive modulus in the transverse direction (ET) was investigated. A method for accurately determining ET from polymer fibers with non-circular cross-sectional shapes is presented. X-ray diffraction was used to measure the crystallite size, crystallinity, and crystallite orientation of the fibers. ET was found to increase with decreasing crystallite orientation along the drawing direction, which decreases the tensile modulus in the longitudinal direction (EL) proportionally to crystallite orientation. Stretching resulted in greater crystallite orientation along the drawing direction for fibers formed under the same coagulation conditions. Increasing the solvent concentration in the coagulation bath resulted in a higher average orientation, but reduced the impact of stretching on the orientation. The relationship between ET and EL observed in the precursor PAN fiber is retained after carbonization, with a 20% increase in ET achieved for a 2% decrease in EL. This indicates that controlled stretching of PAN fiber allows for highly efficient trading off of EL for ET in carbon fiber.

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Recent Progressive Use of Advanced Atomic Force Microscopy in Polymer Science: A Review

Cited by 12 publications

References 132 publications

Investigation on the security of stored data in emerging non-volatile memory devices using AFM- based techniques

Investigation on the security of stored data in emerging non-volatile memory devices using AFM- based techniques

Nanoscale characterization of cementitious composites

Improving Transverse Compressive Modulus of Carbon Fibers during Wet Spinning of Polyacrylonitrile

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