Recent Results on Broadband Nanotransistor Based THz Detectors

Knap, W.; But, Dimitry B.; Dyakonova, N.; Coquillat, Dominique; Gutin, A.; Klimenko, O. A.; Blin, S.; Теппе, Ф.; Shur, M. S.; Nagatsuma, Tadao; Ganichev, Sergey; Otsuji, Taiichi

doi:10.1007/978-94-017-8828-1_10

Cited by 8 publications

(2 citation statements)

References 53 publications

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“…Figure 7 b compares the simulated responses with different segments with the analytical results. The inset figure shows the required number of segments, where

is the characteristic decay length of the THz ac voltage away from the source [ 29 ]. Compared with the 1-segment model, the multi-segment model has a better agreement with the analytical THz response calculated from the THz detection theory [ 28 ] and thus should be used for the design and simulation of the TFT based devices and circuits at THz frequencies.…”

Section: Resultsmentioning

confidence: 99%

Multi-Segment TFT Compact Model for THz Applications

2022

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We present an update of the Rensselaer Polytechnic Institute (RPI) thin-film transistor (TFT) compact model. The updated model implemented in Simulation Program with Integrated Circuit Emphasis (SPICE) accounts for the gate voltage-dependent channel layer thickness, enables the accurate description of the direct current (DC) characteristics, and uses channel segmentation to allow for terahertz (THz) frequency simulations. The model introduces two subthreshold ideality factors to describe the control of the gate voltage on the channel layer and its effect on the drain-to-source current and the channel capacitance. The calculated field distribution in the channel is used to evaluate the channel segment parameters including the segment impedance, kinetic inductance, and gate-to-segment capacitances. Our approach reproduces the conventional RPI TFT model at low frequencies, fits the measured current–voltage characteristics with sufficient accuracy, and extends the RPI TFT model applications into the THz frequency range. Our calculations show that a single TFT or complementary TFTs could efficiently detect the sub-terahertz and terahertz radiation.

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“…Figure 7 b compares the simulated responses with different segments with the analytical results. The inset figure shows the required number of segments, where

Section: Resultsmentioning

confidence: 99%

Multi-Segment TFT Compact Model for THz Applications

2022

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“…To account for the THz current crowding, the channel is split into segments. The required number of segments N ≥ 3L/L o , where L is the channel length and L o = µV gt /(2πf ), where f is the THz radiation frequency, V gt = V gs − V T H is the gate voltage swing, V T H is the threshold voltage [26]. L o represents the characteristic scale of the voltage variation along the FET channel, which must be accounted at frequencies such that L o < L requiring the channel segmentation in the MOSFET model.…”

Section: Thz Spice Modelmentioning

confidence: 99%

Plasmonic FET Terahertz Spectrometer

2020

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We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrometers in the frequency range from 120 GHz to 9.3 THz with different subranges corresponding to the transistors with different features sizes and tunable by the gate bias. The spectrometer uses a symmetrical FET with interchangeable source and drain with the rectified THz voltage between the source and drain being proportional to the sine of the phase shift between the voltages induced by the THz signal between gate-todrain and gate-to-source. This phase difference could be created by using different antennas for the source-to-gate and drain-to gate contacts or by using a delay line introducing a phase shift or even by manipulating the impinging angle of the two antennas. The spectrometers are simulated using the multi-segment unified charge control model implemented in SPICE and ADS and accounting for the electron inertia effect and the distributed channel resistances, capacitances and Drude inductances.

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Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

Faltermeier

Olbrich

Probst

et al. 2015

Journal of Applied Physics

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Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics Appl. Phys. Lett. 104, 251114 (2014) We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization, the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation, the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings, the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a twodimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state. V C 2015 AIP Publishing LLC. [http://dx

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Recent Results on Broadband Nanotransistor Based THz Detectors

Cited by 8 publications

References 53 publications

Multi-Segment TFT Compact Model for THz Applications

Multi-Segment TFT Compact Model for THz Applications

Plasmonic FET Terahertz Spectrometer

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

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