Plasmonic FET Terahertz Spectrometer

Liu, Xueqing; Ytterdal, Trond; Shur, M. S.

doi:10.1109/access.2020.2982275

Cited by 19 publications

(15 citation statements)

References 22 publications

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“…Importantly, the key parameter depends on plasma velocity, mobility, and frequency. The high mobility of graphene makes it one of the best candidates for the THz interferometer as compared to Si, AlGaN/GaN, ALGaN/InGaAs, and p-diamond …”

Section: Theory and Discussionmentioning

confidence: 82%

“…The high mobility of graphene makes it one of the best candidates for the THz interferometer as compared to Si, AlGaN/GaN, ALGaN/InGaAs, and p-diamond. 71 We emphasize that the presence of oscillations is the hallmark of the interference part of the response. The response to the linearly polarized radiation does not show any oscillations in the vicinity of the CNP; see Figure 4b.…”

Section: ■ Theory and Discussionmentioning

confidence: 99%

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Helicity-Sensitive Plasmonic Terahertz Interferometer

et al. 2020

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Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene Field Effect Transistor connected to specially designed antennas. As a key result, we observe helicity-and phase-sensitive conversion of circularly-polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor interfere inside the channel. The helicity sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. Suggested plasmonic interferometer is capable for measuring of phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensisitve probing of plasma wave excitations in two-dimensional materials.

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Section: Theory and Discussionmentioning

confidence: 82%

Section: ■ Theory and Discussionmentioning

confidence: 99%

Helicity-Sensitive Plasmonic Terahertz Interferometer

et al. 2020

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“…This prediction might be revised with improvements in materials quality Relentless scaling of the feature sizes of field-effect transistors down to the minimum feature sizes of 2 nm [33] pushed the cutoff frequencies of Si CMOS and BiCMOS up into the THz band. In the overdamped plasmonic regimes, the shortchannel Si CMOS and MOS could operate at high frequencies as THz detectors [10], [16][17][18], [34,35], mixers [36], and spectrometers [32,37,38] of sub-THz radiation. The Si-MOS integration with diamond sub-THz and THz emitters might meet stringent requirements for THz electronics enabling a potential transition to 6G wireless communications.…”

Section: Discussionmentioning

confidence: 99%

Potential of ultra-wideband gap semiconductors for sub-THz and THz applications

Shur

2023

Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XVI

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Applications of terahertz (THz) and sub-THz technology require portable, inexpensive, efficient, and reliable THz electronics. This stimulated the search for novel semiconductor materials for THz applications. This paper evaluates the potential of ultra-wide bandgap semiconductors (UWBGS) for THz and sub-THz applications. The wide bandgap is the consequence of strong bonds between the nearest neighbors in UWBGS, such as diamond, boron nitride, and aluminum nitride. This is the consequence of small atomic radii of carbon and nitrogen forming intimate contacts with their nearest neighbors. The resulting high energies of optical phonons in these materials lead to superior transport properties, including high breakdown voltages and long mean free paths of electrons in the conduction band and holes in the valence band. These factors make ultra-wideband semiconductors prime candidates for high-power and high-frequency applications. The analysis of the cutoff frequencies and quality factor of plasma oscillations show that diamond has a high potential as an active material for Terahertz Field Effect Transistors (TeraFETs) generating THz and sub-THz radiation, including radiation in the 300 GHz range, which is of special interest for 6G communications. Boron nitride should enable high cutoff frequencies of operation in collision-dominated regimes.

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“…The phase difference between the plasma waves excited at the source and drain depends on the plasma frequency and, hence, could be adjusted by the gate bias. [118][119][120] An important application of this effect is a vector detection (detecting both the amplitude and the phase of a signal) to be used for a line-of-sight detection. Measuring the gate bias, at which the response becomes equal to zero, allows using TeraFET as a THz spectrometer of interferometer.…”

Section: Thz Plasmonic Devicesmentioning

confidence: 99%

Terahertz Plasmonic Technology

Shur

2021

IEEE Sensors J.

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The terahertz (THz) technology has found applications ranging from astronomical science and earth observation to compact radars, nondestructive testing, chemical analysis, explosive detection, moisture content determination, coating thickness control, film uniformity determination, , structural integrity testing , wireless covert communications, medical applications , (including skin cancer detection), imaging, and concealed weapons detection. Beyond 5G Wi-Fi and Internet of Things (IoT) are the expected killer applications of the THz technology. Plasmonic TeraFETs such as Si CMOS with feature sizes down to 3 nm could enable a dramatic expansion of all these applications. At the FET channel sizes below 100 nm, the physics of the electron transport changes from the collision dominated to the ballistic or quasi-ballistic transport. In the ballistic regime, the electron inertia and the waves of the electron density (plasma waves) determine the high frequency response that extends into the THz range of frequencies. The rectification and instabilities of the plasma waves support a new generation of THz and sub-THz plasmonic devices. The plasmonic electronics technology has a potential become a dominant THz electronics sensing technology when the plasmonic THz sources join the compact, efficient, and fast plasmonic TeraFET THz detectors already demonstrated and being commercialized.

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Plasmonic FET Terahertz Spectrometer

Cited by 19 publications

References 22 publications

Helicity-Sensitive Plasmonic Terahertz Interferometer

Helicity-Sensitive Plasmonic Terahertz Interferometer

Potential of ultra-wideband gap semiconductors for sub-THz and THz applications

Terahertz Plasmonic Technology

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