Recent results on metalorganic vapor phase epitaxially grown HgCdTe heterostructure devices

The paper reports on the long-wave infrared HgCdTe detector for utmost short response time operating for unbiased and room temperature condition. The response time was calculated at the level of * 220-520 ps for zero bias condition. It was shown that depending on architecture extra series resistance B 20 X related to the processing allows to reach response time within the range * 220 ps. The highest detectivity of the simulated structure was assessed at the level of * 10 8 Jones assuming immersion.

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“…-n ? transition layer (gradientcontact layers) (Ashley and Elliott 1985;Irvine 1992;Elliot et al 1996). P ?…”

Section: Simulation Procedures and Resultsmentioning

confidence: 99%

Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage condition

et al. 2017

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“…The heterostructure is a six−layer n + −P + −P−p−N−N + device (a capital letter denotes wider band, the symbol + denotes strong doping), similar to extracted photodiodes proposed for the first time by UK scientists [24]. The lightly doped p−type material with x = 0.185 and 5.02−μm−thick layer is the active region of the device.…”

Section: Resultsmentioning

confidence: 99%

High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes

Kopytko

Jóźwikowski

Jóźwikowska

et al. 2010

Opto-Electronics Review

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The high frequency response of near-room temperature long wavelength infrared (LWIR) HgCdTe heterostructure photodiodes is investigated using a Fourier space method. The MOCVD HgCdTe multilayer heterostructures were grown on GaAs substrates. The response time of devices as a function of bias has been measured experimentally by using 10-μm quantum cascade laser and fast oscilloscope with suitable transimpedance amplifier. Results of theoretical predictions are compared with experimental data. It is shown that the response time at weak reverse bias condition is mainly limited by the drift time of carriers moving into π-n+ junction. Using the reverse bias higher than 50 mV, the transit time across the absorber region limits the response time. The response time of small-area devices decreases in the region of week reverse bias achieving value below 1 ns.

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“…A complex multi-layer structure in which the transport of majority and minority carriers is determined by barriers has been used with great success in our laboratory for MWIR photodiodes operating at HOT conditions. The main modification in comparison with the standard three-layer N + πP + structure invented for non-equilibrium conditions is programmed grading of band gap and doping level at heterojunctions (interfaces) (Elliot et al 1996;Piotrowski et al 2007aPiotrowski et al , 2009Piotrowski et al , 2010.…”

Section: Introductionmentioning

confidence: 99%

Modeling of HOT (111) HgCdTe MWIR detector for fast response operation

et al. 2014

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The paper reports on photoelectrical performance of the mid-wave infrared (MWIR) (111) HgCdTe high operating temperature detector for the fast response conditions. Detector structure was simulated with software APSYS by Crosslight Inc. The detailed analysis of the time response as a function of device architecture and applied voltage was performed pointing out optimal working conditions. The time response of the MWIR HgCdTe detector with 50 % cut-off wavelength of λ c ≈ 5.3 μm at T = 200 K was estimated at the level of τ s ≈ 2,500 ps for V = 100 mV and series resistance R Series = 510 . The series resistance's reduction enables to reach τ s ≈ 60−500 ps.

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Recent results on metalorganic vapor phase epitaxially grown HgCdTe heterostructure devices

Cited by 53 publications

References 12 publications

Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage condition

Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage condition

High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes

Modeling of HOT (111) HgCdTe MWIR detector for fast response operation

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