Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

Lanford, W.; Tanaka, Tsuyoshi; Otoki, Yohei; Adesida, I.

doi:10.1049/el:20050161

Cited by 228 publications

(102 citation statements)

References 11 publications

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“…• C, which is needed to recover damages induced by chlorine-based ICP-RIE in the case of recessedgate [16], [19], this lower RTA temperature implies that the CF 4 plasma treatment creates lower damages than the chlorinebased ICP-RIE. It also enables the RTA process to be carried out after the gate deposition, fulfilling the goal of a self-aligned process.…”

Section: B Recovery Of Plasma-induced Damages By Post-gate Annealingmentioning

confidence: 99%

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Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Cai

Zhou

Lau

et al. 2006

IEEE Trans. Electron Devices

507

286

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Section: B Recovery Of Plasma-induced Damages By Post-gate Annealingmentioning

confidence: 99%

“…• C was found to be able to repair the damages [16], [19]. However, the RTA at such high temperatures will not be compatible with the gate metal (Ni/Au, for example) and has to be carried out prior to the gate deposition.…”

Section: Introductionmentioning

confidence: 99%

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Cai

Zhou

Lau

et al. 2006

IEEE Trans. Electron Devices

507

286

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“…Metal organic vapor phase epitaxy (MOVPE) grown AlGaN/GaN heterostructure high electron mobility transistors (HEMTs) have a well-defined layered structure with the two-dimensional electron gas (2DEG) 12,13 and can benefit greatly from recessed gates which allow more powerful modulation of the 2DEG. [14][15][16] Etching of the gate recess is challenging as conventional reactive ion etching (RIE) does not provide sufficiently good control over the etch process, and high energy ions can cause damage to the 2DEG layer. 17,18 These problems can be avoided if GaN ALE is used in etching these recesses.…”

mentioning

confidence: 99%

Atomic layer etching of gallium nitride (0001)

Kauppinen

Khan

Sundqvist

et al. 2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In this work, atomic layer etching (ALE) of thin film Ga-polar GaN(0001) is reported in detail using sequential surface modification by Cl2 adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a standard reactive ion etching system. The feasibility and reproducibility of the process are demonstrated by patterning GaN(0001) films by the ALE process using photoresist as an etch mask. The demonstrated ALE is deemed to be useful for the fabrication of nanoscale structures and high electron mobility transistors and expected to be adoptable for ALE of other materials

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“…Hence, there is a strong motivation to develop enhancementmode (E-mode) devices that enable normally-off function. A number of approaches have been developed to obtain E-mode operation: for instance, a p-type GaN layer deposited on top of the AlGaN barrier under the gate 16,17 ; a recessed gate in which the barrier is thinned under the gate to deplete the 2DEG [18][19][20] ; and an implanted gate where atoms with large electronegativity, such as fluorine (F), are incorporated into the barrier, again to deplete the 2DEG. [11][12][13]15,[21][22][23][24][25] Each technique has its own associated advantages and drawbacks.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

Tang

Lee

Guiney

et al. 2018

Journal of Applied Physics

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We investigate the impact of a fluorine plasma treatment used to obtain enhancement-mode operation on the structure and chemistry at the nanometer and atomic scales of an InAlN/GaN field effect transistor. The fluorine plasma treatment is successful in that enhancement mode operation is achieved with a +2.8 V threshold voltage. However, the InAlN barrier layers are observed to have been damaged by the fluorine treatment with their thickness being reduced by up to 50%. The treatment also led to oxygen incorporation within the InAlN barrier layers. Furthermore, even in the as-grown structure, Ga was unintentionally incorporated during the growth of the InAlN barrier. The impact of both the reduced barrier thickness and the incorporated Ga within the barrier on the transistor properties has been evaluated theoretically and compared to the experimentally determined two-dimensional electron gas density and threshold voltage of the transistor. For devices without fluorine treatment, the two-dimensional electron gas density is better predicted if the quaternary nature of the barrier is taken into account. For the fluorine treated device, not only the changes to the barrier layer thickness and composition, but also the fluorine doping needs to be considered to predict device performance. These studies reveal the factors influencing the performance of these specific transistor structures and highlight the strengths of the applied nanoscale characterisation techniques in revealing information relevant to device performance.

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Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

Cited by 228 publications

References 11 publications

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Atomic layer etching of gallium nitride (0001)

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

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