Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Saito, Wataru; Takada, Yoshiharu; Kuraguchi, Masahiko; Tsuda, Koji; Omura, Ichiro

doi:10.1109/ted.2005.862708

Cited by 509 publications

(245 citation statements)

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] These features are crucial for applications in high-power, high-temperature electronics, 7,17 particularly to realize low on-resistance and normally off highpower FETs. 15,18 Although the standard high frequency capacitancevoltage ͑C-V͒ measurement at room temperature ͑RT͒ is usually done on metal/insulator/semiconductor heterostructure ͑MISH͒ capacitors and/or metal/semiconductor heterostructure ͑MSH͒ Schottky diodes before the fabrication and characterization of the MISHFET devices, the C-V data are often used only to estimate the thicknesses of the insulator film and/or the AlGaN layer 1,4,12,16,19 or to calculate the 2DEG density. 1,20 Although some authors have claimed that the slope of the MISH C-V curve can be used as a measure of the electronic quality of the insulator/AlGaN interface, 4,11,13 this claim should be considered very carefully because the C-V slope in a metal/AlGaN/GaN structure depends on the quality of the AlGaN/GaN interface and other factors, 21 and there is no well known and tested procedure for the analysis of C-V curves from a metal/insulator/AlGaN/GaN structure to extract the state density at the insulator/AlGaN and AlGaN/GaN interfaces.…”

Section: Introductionmentioning

confidence: 99%

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

Miczek

Mizue

Hashizume

et al. 2008

Journal of Applied Physics

180

141

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The impact of states at the insulator/AlGaN interface on the capacitance-voltage ͑C-V͒ characteristics of a metal/insulator/AlGaN/GaN heterostructure ͑MISH͒ capacitor was examined using a numerical solver of a Poisson equation and taking into account the electron emission rate from the interface states. A parallel shift of the theoretical C-V curves, instead of the typical change in their slope, was found for a MISH device with a 25-nm-thick AlGaN layer when the SiN x / AlGaN interface state density D it ͑E͒ was increased. We attribute this behavior to the position of the Fermi level at the SiN x / AlGaN interface below the AlGaN valence band maximum when the gate bias is near the threshold voltage and to the insensitivity of the deep interface traps to the gate voltage due to a low emission rate. A typical stretch out of the theoretical C-V curve was obtained only for a MISH structure with a very thin AlGaN layer at 300°C. We analyzed the experimental C-V characteristics from a SiN x / Al 2 O 3 / AlGaN/ GaN structure measured at room temperature and 300°C, and extracted a part of D it ͑E͒. The relatively low D it ͑ϳ10 11 eV −1 cm −2 ͒ in the upper bandgap indicates that the SiN x / Al 2 O 3 bilayer is applicable as a gate insulator and as an AlGaN surface passivant in high-temperature, high-power AlGaN/GaN-based devices.

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Section: Introductionmentioning

confidence: 99%

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

Miczek

Mizue

Hashizume

et al. 2008

Journal of Applied Physics

180

141

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“…There are several approaches allowing to realize normally-off mode operation e.g. etching of AlGaN barrier layer under the gate electrode [2], surface modification using fluorine plasma [3], the introduction of p-type GaN or AlGaN layer [4], or the use of recessed gate MOS-HEMT structure [5]. Among these…”

mentioning

confidence: 99%

Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

Taube¹,

Sochacki²,

Szmidt³

et al. 2014

International Journal of Electronics and Telecommunications

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Abstract-The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10 −6 A/mm can be achieved for the acceptor dopant concentration at the level of 5 × 10 15 cm −3 . The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO2, instead of SiO2, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.

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“…AlGaN/GaN heterojunction field-effect transistors (HFETs) are great candidates for next generation power switching applications in various power electronics due to superior physical properties such as high mobility, high breakdown field, and high carrier concentration [1][2][3][4][5]. In order to fulfill the maximum power conversion efficiency of AlGaN/GaN based power devices, the parasitic effects such as parasitic inductance caused by interconnection between devices must be minimized [6].…”

Section: Introductionmentioning

confidence: 99%