Recessed Oxynitride Dots on Self-Assembled Ge Quantum Dots Grown by LPD

Abstract

Recessed oxynitride dots deposited on self-assembled Ge dots are demonstrated using liquid-phase deposition ͑LPD͒. By adding ammonia into the solution, the nitrogen atoms can be incorporated into the deposited film. The tensile strain of the Si cap layer directly deposited on Ge dots can enhance the oxynitride nucleation and deposition on Si surface. The tensile strain may also increase the etching rate of the Si cap layer and the recessed dots are formed directly above the Ge dots. The LPD-SiON dots have a higher dot step height as compared to LPD-SiO 2 dots.

Influence of defects and interface on radiative transition of Ge

“…7 Subsequently, a thin Al film ͑10 nm͒ was evaporated on the SiO 2 in a circular area with radius of ϳ1.2 mm to form a gate electrode. 7 Subsequently, a thin Al film ͑10 nm͒ was evaporated on the SiO 2 in a circular area with radius of ϳ1.2 mm to form a gate electrode.…”

Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors

“…12 Before oxide deposition, the sample was cleaned by a HF dip. The oxide thickness is measured by an ellipsometer.…”

Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes

“…After PL measurement, we fabricate the LPD has the advantages of low thermal budget, low cost, and high throughput [12]. Subsequently, a thin Pt film (9nm) was evaporated on the SiO 2 in an area of with radius of ~1 mm to form a gate electrode.…”