Recombination by Tunneling in Electroluminescent Diodes

Morgan, T. N.

doi:10.1103/physrev.148.890

Cited by 58 publications

(29 citation statements)

References 19 publications

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“…The effect of a DC-electric field on the absorption coefficient of solids and particularly in semiconductors has been extensively studied [1][2][3][4][5]. The main characteristics of the effect include the appearance of an exponential tail below the band edge reminiscent of the tunneling effect and the development of an oscillatory behavior (Franz-Keldysh oscillations) above the fundamental absorption edge E g [6,7].…”

Section: Introductionmentioning

confidence: 99%

Phonon-assisted two-photon absorption in the presence of a DC-field: The nonlinear franz-keldysh effect in indirect gap semiconductors

García

Kalynamaran

2006

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference

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Section: Introductionmentioning

confidence: 99%

Phonon-assisted two-photon absorption in the presence of a DC-field: The nonlinear franz-keldysh effect in indirect gap semiconductors

García

Kalynamaran

2006

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference

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“…According to our study we concluded that this 600 nm emission at low currents was caused by tunneling radiative recombination process and appeared only in some local LED areas at low forward bias. Kudryashov et al have used [3,4] the model of diagonal tunneling [6][7][8] for description of similar long wavelength peaks in emission spectra for GaN based green and blue LEDs at low currents. We assume that local red emission in our green LEDs can be attributed to the similar diagonal tunneling process.…”

Section: Methodsmentioning

confidence: 99%

“…It is very difficult to calculate the value of critical electric field in p-n junction due to the local nature of tunneling process in our samples. However, it suggests that this value will be much lower than a critical electric field for uniform tunneling breakdown [7].…”

Section: Electrical Measurementsmentioning

confidence: 98%

Investigation of local tunneling phenomena in green InGaN‐based LEDs

Onushkin

Lee

Yang

et al. 2007

Phys. Status Solidi (c)

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The tunneling radiative recombination in green InGaN based Light Emitting Diodes (LEDs) has been studied by micro-Electroluminescence measurements. It was found that this recombination was very local, which has lateral size less than 1 µm and spectral peak position around 600 nm. Changes of growth conditions led to a reduction in the concentration of these defects, improving the current-voltage characteristics and slightly enhancing the optical efficiency of green LEDs.1 Introduction GaN-based light emitting diodes (LEDs) operating in the range of green-to-violet are commercially available and have received much attention. The GaN-based LEDs were usually grown on sapphire substrates and had high density of different defects, especially dislocations. However, it was noted that the high external quantum efficiency was achieved for blue and violet LEDs. Generally, the optical efficiency of green LEDs is lower than that of blue LEDs. Moreover, the current voltage (I-V) characteristics, for example, the ideality factors for green LEDs are usually higher than those for blue LEDs especially at low current regime. Degradation in I-V characteristics was attributed to the tunneling process [1,2]. The spectra of tunneling emission in blue and green LEDs under low current regime were intensively investigated [2][3][4]. In our work, we used the confocal microscopy to study the distribution and spectral properties of local tunneling recombination emission (~600 nm) in green LEDs under low current regime.

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“…This theory could be of great significance towards identifying promising nonlinear optical materials for application in diverse areas such as optical switching and optical limiting. * Electronic address: hgarcia@siue.edu in the past [1,2,3,4,5,6]. The effect, known as the Franz-Keldysh (FK) effect [7,8], has been used as a tool in spectroscopy to modulate the energy gap and resolve details of the band structure otherwise embedded in a broadband background [9,10,11,12].…”

mentioning

confidence: 99%

Convolution theorem for nonlinear optics

García

Kalyanaraman

2007

Applied Physics Letters

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We have expressed the nonlinear optical absorption of a semiconductor in terms of its linear spectrum. We determined that the two-photon absorption coefficient in a strong DCelectric field of a direct gap semiconductor can be expressed as the product of a differential operator times the convolution integral of the linear absorption without a DC-electric field and an Airy function. We have applied this formalism to calculate the two-photon absorption coefficient and nonlinear refraction for GaAs and ZnSe using their linear absorption and have found excellent agreement with available experimental data.A fundamental limitation in non-linear spectroscopy is the requirement for large peak laser intensities because a coherent N-photon process (N ≥ 2) has a small cross section. With the limited availability of continuous laser sources having broad bandwidths and good coherence, nonlinear spectroscopy is challenging. In contrast linear absorption cross sections are much larger, especially in semiconductors close to a critical point (Van Hove singularities). Therefore, it would be ideal if the nonlinear properties, such as the two-photon absorption and nonlinear refraction of a semiconductor, could be predicted from their linear spectrum, which is relatively straightforward to obtain. In this Letter, we present a theoretical approach to predict the two-photon absorption spectrum of a direct gap semiconductor based only on its linear absorption spectrum close to the band-edge. The formalism developed here also gives information about the role of a DC-electric field on the nonlinear optical response of semiconductors. We have also applied the KramersKronig relation to calculate the nonlinear refraction and have obtained excellent agreement with the available experimental data for GaAs and ZnSe direct-gap semiconductors. This theory could be of great significance towards identifying promising nonlinear optical materials for application in diverse areas such as optical switching and optical limiting. * Electronic address: hgarcia@siue.edu

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Recombination by Tunneling in Electroluminescent Diodes

Cited by 58 publications

References 19 publications

Phonon-assisted two-photon absorption in the presence of a DC-field: The nonlinear franz-keldysh effect in indirect gap semiconductors

Phonon-assisted two-photon absorption in the presence of a DC-field: The nonlinear franz-keldysh effect in indirect gap semiconductors

Investigation of local tunneling phenomena in green InGaN‐based LEDs

Convolution theorem for nonlinear optics

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