Recombination-Enhanced Effect in Green/Yellow Luminescence from BeZnCdSe Quantum Wells Grown 
by Molecular Beam Epitaxy

Akimoto, R.

doi:10.1007/s11664-018-6090-3

Journal of Elec Materi

2018

DOI: 10.1007/s11664-018-6090-3

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Recombination-Enhanced Effect in Green/Yellow Luminescence from BeZnCdSe Quantum Wells Grown by Molecular Beam Epitaxy

R. Akimoto

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Cited by 4 publications

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“…The image of the green channel shows an intensity fluctuation with irregular shapes of sizes 1-2 μm, reflecting a spatial distribution pattern of non-radiative centers. 21) In contrast, bright circular spots are visible both in the yellow and red channels, and the spot density increases gradually toward the area of high electron dose. The diameter (FWHM) of the spots that are isolated from others is approximately 0.5 μm, which corresponds to the condition of diffraction-limited resolution.…”

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CdSe quantum dot formation induced by electron beam irradiation

Akimoto¹

2022

Jpn. J. Appl. Phys.

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The formation of quantum dots (QDs) induced by electron beam irradiation onto a highly strained CdSe layer on ZnSe (001) is investigated. In situ reflection high-energy electron diffraction is used for dual purposes: QD formation by electron beam irradiation and monitoring the progress of surface morphology. QD formation is confirmed by observation of nanoscale three-dimensional islands using transmission electron microscopy. It is also verified by imaging of an isolated single QD emission at room temperature by photoluminescence microscopy. Electron-beam-irradiation increases QD size both in height and lateral directions, resulting in shift of emission from green to yellow spectral region.

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confidence: 99%

CdSe quantum dot formation induced by electron beam irradiation

Akimoto¹

2022

Jpn. J. Appl. Phys.

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A comparative study of the operational characteristics of CdSe quantum dots and BeZnCdSe quantum well laser diodes

Akimoto

2020

Journal of Applied Physics

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In this study, the operational durability of laser diodes (LDs) with CdSe quantum dot (QD) active region is examined through a detailed comparison with its BeZnCdSe quantum well (QW) counterpart. To focus on the impact on the difference caused by the nature of the active region, other layers such as the waveguide layer, cladding layer, and contact layer, which influence the mode profile of the optical confinement and electrical properties, are maintained under the same condition. Although the threshold current of the CdSe QD LD is higher than that of the BeZnCdSe QW LD by a factor of 1.6–1.7 under a fresh condition, the degradation of the former proceeds much more slowly than that of the latter. This is confirmed by a reliability test conducted under the current injection condition both below and above the lasing threshold. The result indicates that the stronger carrier localization in the CdSe QDs compared to that in the BeZnCdSe QWs prevents the interaction with remote defects in the active layer. Consequently, the CdSe QD LD is less sensitive to degradation due to recombination-enhanced defect reactions.

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Electron beam induced multi-wavelength lasing in CdSe quantum dot lasers

Akimoto

2024

Journal of Applied Physics

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This study investigates the effects of electron beam irradiation on the lasing characteristics of optically pumped CdSe quantum dot (QD) lasers grown on GaAs substrates using molecular beam epitaxy. The experimental setup allows the creation of two types of CdSe QDs with distinct size differences, with and without electron beam irradiation during the epitaxy. Lasing wavelengths were observed at 534 nm in the non-irradiated region and between 548 and 557 nm in the irradiated regions, depending on the electron beam irradiation conditions, achieving multi-wavelength lasing in the green-yellow ranges on a single chip. Internal laser parameters were evaluated for both irradiated and non-irradiated regions across different cavity lengths. Photoluminescence (PL) spectra revealed significantly higher integrated PL intensity in the irradiated regions compared to the non-irradiated regions, attributed to reduced point defects. However, at the lasing threshold, the impact of these defects is negligible. Lasing spectra exhibited a notable blue shift in the irradiated regions with an increase in threshold intensity due to the state-filling effect, which also causes a decrease in internal quantum efficiency. The modal gain and transparent intensity were evaluated, showing lower gain values in the irradiated regions, consistent with the observed broadening of the PL spectrum. These findings highlight the dynamic nature of the state-filling effect and its impact on lasing performance, providing insights into the mechanisms affecting CdSe QD lasers under electron beam irradiation in green-yellow spectrum range.

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Recombination-Enhanced Effect in Green/Yellow Luminescence from BeZnCdSe Quantum Wells Grown by Molecular Beam Epitaxy

Cited by 4 publications

References 18 publications

CdSe quantum dot formation induced by electron beam irradiation

CdSe quantum dot formation induced by electron beam irradiation

A comparative study of the operational characteristics of CdSe quantum dots and BeZnCdSe quantum well laser diodes

Electron beam induced multi-wavelength lasing in CdSe quantum dot lasers

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