Reconfigurable Doherty Power Amplifier for Multifrequency Wireless Radio Systems

Mohamed, Ahmed Mohamed Mahmoud; Boumaiza, Slim; Mansour, Raafat R.

doi:10.1109/tmtt.2013.2247617

Cited by 32 publications

(6 citation statements)

References 30 publications

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“…It also causes the non-ideal performance of the PA at the actual operating frequency range [14,15]. In order to solve these problems, reconfigurable PAs supporting multi-band operation have been proposed [16,17,18,19,20,21,22]. In [16,17,18], dual-band Doherty PA is presented by using diodes.…”

Section: Introductionmentioning

confidence: 99%

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Reconfigurable dual-band power amplifier based on memristor

Zhang

Cheng

et al. 2020

IEICE Electron. Express

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This letter presents a reconfigurable dual-band power amplifier based on memristor. The memristor is first applied in the field of RF power amplifier design. Based on the basic theory of memristor, different values of the resistance of the memristor are obtained by adding different dc voltages on the memristor, and conversion between different output matching circuits is realized. Thus, a reconfigurable output matching circuit is constructed to realize a reconfigurable dual-band power amplifier. To verify the effectiveness of the proposed method, a reconfigurable dualband power amplifier is designed and simulated. The simulation results show that by setting different dc voltages of the memristor, the saturated output power of 41 dBm and drain efficiency of more than 70% can be achieved at two frequency points of 2.0 GHz and 3.0 GHz, and the gain can reach 10 dB.

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Section: Introductionmentioning

confidence: 99%

“…In order to solve these problems, reconfigurable PAs supporting multi-band operation have been proposed [16,17,18,19,20,21,22]. In [16,17,18], dual-band Doherty PA is presented by using diodes. Another reconfigurable PA that supports multi-band operation is introduced by choosing appropriate micro-strip transmission line [19,20,21].…”

Section: Introductionmentioning

confidence: 99%

Reconfigurable dual-band power amplifier based on memristor

Zhang

Cheng

et al. 2020

IEICE Electron. Express

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“…Volterra Series (VS) behavioral models and their reduced forms have gained increased attention in the current wireless communication systems such as LTE-A standard, because of their high accuracy compared to the memory polynomial models [11], [15], [16]. However, when wide signal bandwidth is used, the number of required coefficients for the PA behavioral characterization and predistortion is extremely large [11].…”

Section: Introductionmentioning

confidence: 99%

Digital Predistorter Design Using a Reduced Volterra Model to Linearize GaN RF Power Amplifiers

Rezgui¹,

Rouissi²,

Ghazel³

2018

RADIOENGINEERING

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In this paper, a novel method for reducing a Simplified Volterra Series (SVS) model size is proposed for GaN RF Power Amplifier (PA) Digital Predistorter (DPD) design. Using the SVS-modified model, the number of coefficients needed for the PA behavioral modeling and predistortion can be reduced by 60% while maintaining acceptable performances. Simulation and implementation tests are performed for a Class AB GaN PA and Doherty GaN PA using a 20-MHz Long Term Evolution-Advanced (LTE-A) signal. The Adjacent Channel Power Ratio (ACPR) attains-40 dB and-41 dB for the Doherty and Class AB GaN PAs, respectively. The implementation complexity is also studied and the obtained results prove the capability of the proposed model to linearize PA using 3% of the Slice LUTs and 87% of the DSP48E1 available in the Xilinx Zynq-7000 FPGA.

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“…The authors of [7, 8] present reconfigurable multi-frequency gallium nitride (GaN) power amplifers (PAs) based on commercially available components. Both publications use RF-MEMS-switches as tuning devices, due to their “high linearity and low insertion loss […]” [8] and their high bias voltage “typically far beyond the power amplifier voltage swing” [7]. Liu et al [7] show a class-AB single-transistor PA with a broadband output-matching network and a 1-bit reconfigurable input stage optimized for efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…The tri-band PA is designed for 1.4, 2.5 and 3.6 GHz. In [8], a more complex Doherty design was chosen to realize a high efficiency PA for 1.9, 2.14 and 2.6 GHz.…”

Section: Introductionmentioning

confidence: 99%

RF-MEMS multi-mode-matching networks for GaN power transistors

Figur¹,

Raay

Quay

et al. 2014

Int. J. Microw. Wireless Technol.

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This work presents radio-frequency-microelectromechanical-system (RF-MEMS)-based tunable input- and output-matching networks for a multi-band gallium nitride (GaN) power-amplifier applications. In the first part, circuit designs are shown and characterized for a fixed operation mode of the transistor, i.e. either a maximum-output-power- or a maximum-power-added-efficiency (PAE)-mode, which are finally combined into a multi-mode-matching network (M 3 N); the M 3 N allows to tune the operation mode of the transistor independently of its operational frequency. The matching networks are designed to provide optimum matching for the power amplifier at three to six different operating frequencies for maximum-output-power- and maximum-PAE-mode. In the frequency range from 3.5 to 8.5 GHz, return losses of 10 dB and higher were measured and insertion losses of 0.5-1.9 dB were demonstrated for the output-matching networks. Further characterizations were performed to test the dependency on the RF-input power, and no changes were observed up to power levels of 34 dBm when cold-switched

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Reconfigurable Doherty Power Amplifier for Multifrequency Wireless Radio Systems

Cited by 32 publications

References 30 publications

Reconfigurable dual-band power amplifier based on memristor

Reconfigurable dual-band power amplifier based on memristor

Digital Predistorter Design Using a Reduced Volterra Model to Linearize GaN RF Power Amplifiers

RF-MEMS multi-mode-matching networks for GaN power transistors

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