Reconfigurable photovoltaic effect for optoelectronic artificial synapse based on ferroelectric p-n junction

Wang, Yanrong; Wang, Feng; Wang, Zhenxing; Wang, Junjun; Yang, Jia; Yao, Yuyu; Li, Ningning; Sendeku, Marshet Getaye; Zhan, Xueying; Shan, Congxin; He, Jun

doi:10.1007/s12274-021-3833-x

Cited by 39 publications

(28 citation statements)

References 40 publications

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“…Here, MoTe 2 and α‐In 2 Se 3 were chosen because we found that their heterostructures show nonvolatile tunable photovoltaic effect in our previous work. [ 23 ] Both MoTe 2 and α‐In 2 Se 3 have considerable conductance in the dark state, while PVK almost shows an insulator behavior with only a noisy‐level current (see output characteristic curves shown in Figure S2b–d in the Supporting Information). Hence, our device forms a p–i–n structure, which can improve light sensitivity compared with a p–n junction.…”

Section: Resultsmentioning

confidence: 99%

“…The reason is the reversal of the stacking order, which will change the relative direction between built-in potential and polarization state, thus leading to the enhancement or reduction of the photovoltaic performance. [23,52] The stability of the short-circuit current density reflects the stability of the polarization state. We compared the short-circuit current densities (in both the polarization states) for the 1st and 1000th cycles in Figure 4b and found that the magnitude of the current density barely changed.…”

Section: Resultsmentioning

confidence: 99%

“…The above assumption has been proved recently by us, where α‐In 2 Se 3 /MoTe 2 vdWHs show a nonvolatile tunable PV effect and neuromorphic optoelectronic functions. [ 23 ] Nevertheless, the PV effect is still not high enough due to the low light absorption by ultrathin body thickness. On the other hand, 2D Ruddlesden–Popper perovskites (PVK) have been extensively studied because of their good optoelectronic performances.…”

Section: Introductionmentioning

confidence: 99%

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A Ferroelectric p–i–n Heterostructure for Highly Enhanced Short‐Circuit Current Density and Self‐Powered Photodetection

Yan

Liu

Wang

et al. 2022

Adv Elect Materials

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Abstract2D‐layered materials and van der Waals heterostructures (vdWHs) have attracted intense interests in optoelectronic applications. However, the performance of photovoltaic effect based on vdWHs is still unsatisfactory, which is subjected to many factors, including settled small built‐in potentials and low light absorptions. Here, a pronounced photovoltaic effect is reported in MoTe2/(C4H9NH3)2(CH3NH3)2Pb3I10/α‐In2Se3 ferroelectric p–i–n vdWHs. An all‐dry transfer method held in an inert environment is utilized to ensure a good materials’ stability and high interfacial quality. The short‐circuit current density can increase three orders to 38 mA cm−2 by introducing perovskite; hence, the device works as a sensitive self‐powered photodetector with a photo on/off ratio of 2.4 × 105, a detectivity of 1.2 × 1012 Jones, and response times of 730 µs/620 µs. Moreover, the short‐circuit current density increases more than 25 times by enhancing the built‐in potential through programming the ferroelectric polarization of α‐In2Se3. In total, short‐circuit current density as high as 468 mA cm−2 is reached, which is one‐to‐two orders higher than that of typical lateral vdWHs. This work demonstrates the potential of high‐performance optoelectronic devices based on ferroelectric van der Waals p–i–n heterostructures.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Ferroelectric p–i–n Heterostructure for Highly Enhanced Short‐Circuit Current Density and Self‐Powered Photodetection

Yan

Liu

Wang

et al. 2022

Adv Elect Materials

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“…The work function of IGZO is 4.89 eV, which is lower than that of the Pt electrode, therefore, the contact between IGZO and Pt is Ohmic contact, and a schematic of the band structure of LNO/PZT/IGZO/Pt is formed as shown in figure 4. Since there is no inner potential existing at both bottom and top electrodes, it facilitates the transfer of photo-induced charger carrier [15].…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Pt/InGaZnO/PZT/LNO hetero-structure by one-step photochemical method

Yue²,

Eka³

et al. 2022

Mater. Res. Express

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The transparent InGaZnO (IGZO) film was fabricated on the surface of PZT film by photochemical sol-gel method, hence more UV light can penetrate IGZO film reaching the IGZO/PZT junction and produce photo-induced charge carrier to obtain a high photocurrent. To decrease the crystalline temperature of PZT film, and simplify the fabrication process, the UV photochemical treatment of IGZO and PZT happened at the same time. During photochemical process, the organic agents of both IGZO and PZT gel film were decomposed greatly, forming an active metal-oxygen bond, which facilitate crystallization at a low temperature. The obtained IGZO film show a uniform surface with homogeneous particles, the obtained Pt/IGZO/PZT/LNO hetero-structure shows a good photoelectric property.

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“…In addition to the neuromorphic electronic and spintronic devices, low‐dimensional heterostructures exhibit some optoelectronic properties inaccessible in bulk heterostructure, and also show great potential in the design of neuromorphic optoelectronic devices. [ 11,15,16,62–66 ] The study of neuromorphic optoelectronic computing can be tracked back to late 1980s, when Caver Mead proposed to use the inherent physical properties of silicon‐based device to design the retinormophic sensor. [ 67 ] Later, metal/semiconductor diodes were used to process detected images with assist of spatial light modulator and analog memory.…”

Section: Introductionmentioning

confidence: 99%

Emerging Low‐Dimensional Heterostructure Devices for Neuromorphic Computing

Liang

Cheng

et al. 2022

Small Structures

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Over the last few decades, advance in material science has made it possible to control the dimensions of materials structures with atomic scale precision and to realize various low‐dimensional heterostructures. These heterostructures have been widely used in the electronic and spintronic as well as optoelectronic devices, with great success. Engineering the dimensionality and physical properties of low‐dimensional materials enables to design a large variety of low‐dimensional artificial heterostructures. The inherent physical properties that these emerging low‐dimensional heterostructures exhibit open unprecedented opportunities for neuromorphic computing applications, e.g., neuromorphic electronics, neuromorphic spintronics, and neuromorphic optoelectronics, which lay the foundation for building up intelligent system in the future. Herein, the current main status of the emerging low‐dimensional heterostructures used in neuromorphic electronic, neuromorphic spintronic, and neuromorphic optoelectronic devices is reviewed, and the relevant challenges and outlook for future advances are discussed.

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Reconfigurable photovoltaic effect for optoelectronic artificial synapse based on ferroelectric p-n junction

Cited by 39 publications

References 40 publications

A Ferroelectric p–i–n Heterostructure for Highly Enhanced Short‐Circuit Current Density and Self‐Powered Photodetection

A Ferroelectric p–i–n Heterostructure for Highly Enhanced Short‐Circuit Current Density and Self‐Powered Photodetection

Fabrication of Pt/InGaZnO/PZT/LNO hetero-structure by one-step photochemical method

Emerging Low‐Dimensional Heterostructure Devices for Neuromorphic Computing

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