Reconstructions and growth of Ag on Si(001)(2 × 1)

Winau, D.; Itoh, Hiroshi; Schmid, Andreas K.; Ichinokawa, T.

doi:10.1016/0039-6028(94)90626-2

Cited by 53 publications

(17 citation statements)

References 15 publications

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“…In this regard, Ag growth on Ge and Si͑100͒ share some similarities. On Si͑100͒, a 2ϫ3 structure was observed along with pitting after either depositing Ag between 770-and 870 K 25,26 or annealing a Ag layer deposited at room temperature to 620-770 K. 7,27 At lower Ag coverages, diamond-shaped 2ϫ3 islands with edges oriented along substrate ͑310͒ directions FIG. 9.…”

Section: B Structure Of Clusters and Islands Formed During Ag Growthmentioning

confidence: 99%

Formation of metastable two-dimensional structures during Ag growth on Ge(100)

Chan

Altman

2002

Phys. Rev. B

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Silver growth on Ge͑100͒ between 330 and 570 K was studied using scanning tunneling microscopy. At 330 K, three-dimensional ͑3D͒ clusters along with two types of two-dimensional ͑2D͒ islands were observed: one elongated perpendicular to the substrate dimer rows, the other parallel to the dimer rows. The spacing and registry with the substrate of the former could be explained by Ag adatoms attaching across the substrate dimer bond, while the latter could be attributed to Ag ad-dimers. Annealing caused the larger 3D clusters to grow at the expense of the smaller 3D clusters and 2D islands; at 470 K the 2D islands were completely eliminated. Low-energy electron diffraction indicated that the 3D clusters were oriented with their ͑110͒ planes parallel to the surface. After annealing, the 3D clusters became elongated parallel to the Ge dimer rows indicating that the Ag͓1 10͔ direction aligns parallel to the Ge 1ϫ direction. Although this suggested that the 3D clusters were lower in energy, Ag growth at 470 K led to two types of 2D islands along with pitting of the Ge surface; the pitting was taken as an indication that the islands were intermixed. Images of the islands revealed 2ϫ3 and 3ϫ2 periodicities. Images of the 3ϫ2 structure showed a single maximum per unit cell, while images of domain boundaries showed that the 3ϫ2 structure changed the outermost Ge layer. A model based on Ag-Ge mixed ad-dimers and Ag substitution into the Ge surface can explain these features. The 2ϫ3 and 3ϫ2 structures could only be seen after Ag deposition at ϳ470 K; both annealing films deposited at lower temperatures and higher growth temperatures created only 3D clusters. Thus formation of these intermixed structures was attributed to growth of metastable Ag-Ge nuclei at 470 K that were kinetically inhibited from forming at lower temperatures and whose lifetimes were too short to grow at higher temperatures.

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Section: B Structure Of Clusters and Islands Formed During Ag Growthmentioning

confidence: 99%

Formation of metastable two-dimensional structures during Ag growth on Ge(100)

Chan

Altman

2002

Phys. Rev. B

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“…8 From this electron counting, we have suggested that the Si(001)(2ϫ3)-Ag surface has a Ag coverage of 2 3 ML, 8 in contradiction to the available structure models. 4,5 The Ag coverage of 2 3 ML also holds for the c(6ϫ2) phase, although there is no proposed structure model at present.…”

Section: Discussionmentioning

confidence: 99%

“…Recently there has been a renewal of interest in the Ag/Si͑001͒ system, which was motivated partly by the observation of the local-or longrange-order structures of the 2ϫ1, 2ϫ2, and 2ϫ3 phases during the initial growth of Ag on Si͑001͒ by scanning tunneling microscopy ͑STM͒ and low-energy-electrondiffraction ͑LEED͒ studies. [2][3][4] The surface structures of these surface phases have not been made clear.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of theSi(001)c(6×2)-Ag surface studied by angle-resolved photoelectron spectroscopy using synchrotron radiation

et al. 1999

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The surface electronic structure of the single-domain Si(001)c(6ϫ2)-Ag surface has been studied by polarization-dependent angle-resolved photoelectron spectroscopy ͑ARPES͒ using synchrotron radiation. Through detailed ARPES measurements, the Si(001)c(6ϫ2)-Ag surface is found to be semiconducting with a band gap larger than ϳ0.7 eV. Three different surface states are identified within the bulk band gap, whose dispersions and symmetry properties are determined. The surface band structures observed have a close resemblance with those of the Si (001)(2ϫ3)-Ag surface reported recently ͓H. W. Yeom et al., Phys. Rev. B 57, 3949 ͑1998͔͒. This result suggests a similarity between the substrate reconstructions of the c(6ϫ2)-Ag and (2ϫ3)-Ag phases formed at a proximate condition. The surface structure of Si(001)c(6ϫ2)-Ag and the origins of the surface states observed are discussed.

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“…Some studies have inferred that this wetting layer terminates at 0.25 ML [18,19], some at 0.5 ML [20,21], and others at 1.0 ML [22][23][24][25][26][27]. It is now generally accepted that for growth at room temperature (RT) the wetting layer terminates at about 1 ML [22][23][24][25][26][27] When the coverage is increased significantly beyond a monolayer by depositing more Ag onto the sample, the surface is found to be composed of a number of platelets.…”

Section: Introductionmentioning

confidence: 95%