Record gain at 3.1 GHz of 4H-SiC high power RF MESFET

Elahipanah, Hossein

doi:10.1016/j.mejo.2010.10.009

Cited by 15 publications

(4 citation statements)

References 16 publications

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“…The further the space between gate and "step", the more obvious the effect is. But the step can't be set at the corner near the drain, because there is also a peak at the corner near the drain as to the electric field crowding effect [3]. The potential distribution of the conventional buried gate and proposed 4H-SiC MESFET is compared in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…In order to achieve high output power density, 4H-SiC MESFET must sustain large saturated drain current and endure high breakdown voltages. Recently, many effective structures have successfully realized in SiC MEFETs, such as spacer layer structure (also called buried-channel structure) [3], field plate structure [1], double-recessed structure [4] and so on. The field plate technology is an effective method to increase the breakdown voltage, but it would send up the effective gate length and therefore apparently lower the saturated drain current and the cut-off frequency f T [5].…”

Section: Introductionmentioning

confidence: 99%

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Improved Performance of 4H-SiC MESFET with Stepped-Channel

Jia

Yang

Zhang

et al. 2012

AMM

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A novel 4H-SiC MESFET with stepped-channel (stepped-spacer) structure is proposed for the first time and analyzed by 2D numerical simulation. Based on the stepped buried oxide structure of SOI which can produce additional electrical Electric field peaks, much more advantages can be obtained through a stepped-channel structure compared to that of the field terminal technology, such as an obvious increase of the breakdown voltage which is equal to the electric field to the path integral, and the lower capacitances lead to a higher cut-off frequency. The simulation results show that a 100% higher saturated drain current and a 153% larger breakdown voltage can be obtained utilizing the stepped-channel structure MESFET than those of the conventional counterpart.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improved Performance of 4H-SiC MESFET with Stepped-Channel

Jia

Yang

Zhang

et al. 2012

AMM

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“…With the employment of serpentine channel simultaneously, it could be more prominent on the breakdown of the device. The recessed gate-drain drift region on the UUSC-MESFET reduces the electric field strength at the edge of the gate [14]. And, it also contributes to reduce the electric field crowding at the gate corner near the drain which results in the larger breakdown voltage.…”

Section: Breakdown Voltagementioning

confidence: 99%

Improved Ultrahigh Upper Gate 4H-SiC MESFET with Serpentine Channel Structure

Jia¹,

Luo²,

Ma³

2017

dtcse

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Abstract. An improved ultrahigh upper gate 4H-SiC MESFET (UU-MESFET) with serpentine channel structure (UUSC-MESFET) was proposed. With the implement of the serpentine channel, the channel electric field and the gate depletion layer have been more modulated compared with the UU-MESFET. The simulations show that the breakdown voltage and the drain saturation current of UUSC-MESFET are improved by 13.6%, 12% than those of UU-MESFET and by 44.5%, 23% than those of the double-recessed structure (DR-MESFET). By introducing a recessed channel layer, the proposed structure has an improvement of 27.3%, 81.3% in the out maximum power density compared with that of the UU-MESFET and DR-MESFET, respectively. In the meanwhile, the proposed structure possesses smaller gate-source capacitance, which results in better RF characteristics. Therefore the proposed structure has a superior electrical characteristic and performance.

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“…Traditional 4H-SiC MESFETs have been experimentally verified. Many experimental results have been reported so far [18,19], but they are all fixed structures, and the effect of structural parameters on the results has not been studied. Based on multi-recessed 4H–SiC MESFETs with double-recessed p-buffer layer (MRD 4H-SiC MESFET) [20], we adopt a new design method optimized by technology computer aided design (TCAD) simulation and verified in advanced design system (ADS) software.…”

Section: Introductionmentioning

confidence: 99%

Improved MRD 4H-SiC MESFET with High Power Added Efficiency

et al. 2019

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An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software in this paper. Based on multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (MRD 4H-SiC MESFET), the recessed area of MRD MESFET on both sides of the gate is optimized, the direct current (DC), radio frequency (RF) parameters and efficiency of the device is balanced, and the IMRD MESFET with a best power-added efficiency (PAE) is finally obtained. The results show that the PAE of the IMRD MESFET is 68.33%, which is 28.66% higher than the MRD MESFET, and DC and RF performance have not dropped significantly. Compared with the MRD MESFET, the IMRD MESFET has a broader prospect in the field of microwave radio frequency.

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Record gain at 3.1 GHz of 4H-SiC high power RF MESFET

Cited by 15 publications

References 16 publications

Improved Performance of 4H-SiC MESFET with Stepped-Channel

Improved Performance of 4H-SiC MESFET with Stepped-Channel

Improved Ultrahigh Upper Gate 4H-SiC MESFET with Serpentine Channel Structure

Improved MRD 4H-SiC MESFET with High Power Added Efficiency

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