Record‐Low Inhomogeneous Broadening of Site‐Controlled Quantum Dots for Nanophotonics

Mohan, Arun; Gallo, Pascal; Felici, Marco; Dwir, B.; Rudra, A.; Faist, Jérôme; Kapon, E.

doi:10.1002/smll.201000341

Cited by 84 publications

(83 citation statements)

References 26 publications

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“…Pyramidal QDs have wide-ranging properties and applications, including (i) the reproducible formation of excitonic states, which provides uniform single photon emission [11][12][13], (ii) precise coupling in quantum electrodynamic cavities [14] because of accurate site and energy control, and (iii) efficient emission of polarizationentangled photons [15] owing to the high-symmetry [111] growth orientation and the spatial uniformity provided by the patterned substrate. The dependence of the optical transition polarization on the QD shape, size, and symmetry [16] has recently been extended to an analysis that reveals the delicate interplay between the excitonic fine structure and the symmetry and composition of QDs [17].…”

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confidence: 99%

Self-Limiting Evolution of Seeded Quantum Wires and Dots on Patterned Substrates

2012

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confidence: 99%

Self-Limiting Evolution of Seeded Quantum Wires and Dots on Patterned Substrates

2012

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“…Beyond diamond, defect centers in other materials such as silicon carbide [51], gallium nitride [52], or rare-earth ions in solids [53,54] could hold promise, as well as artificial atoms like quantum dots [55][56][57], all of which exhibit appreciable distributions of resonance frequencies.…”

Section: Future Directionsmentioning

confidence: 99%

Super-Resolution Localization and Readout of Individual Solid State Qubits

Bersin

Walsh

Mouradian

et al. 2018

Conference on Lasers and Electro-Optics

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A central goal in quantum information science is to establish entanglement across multiple quantum memories in a manner that allows individual control and readout of each constituent qubit. In the area of solid state quantum optics, a leading system is the negatively charged nitrogen vacancy center in diamond, which allows access to a spin center that can be entangled to multiple nuclear spins. Scaling these systems will require the entanglement of multiple NV centers, together with their nuclear spins, in a manner that allows for individual control and readout. Here we demonstrate a technique that allows us to prepare and measure individual centers within an ensemble, well below the diffraction limit. The technique relies on optical addressing of spin-dependent transitions, and makes use of the built-in inhomogeneous distribution of emitters resulting from strain splitting to measure individual spins in a manner that is non-destructive to the quantum state of other nearby centers. We demonstrate the ability to resolve individual NV centers with subnanometer spatial resolution. Furthermore, we demonstrate crosstalk-free individual readout of spin populations within a diffraction limited spot by performing resonant readout of one NV during a spectroscopic sequence of another. This method opens the door to multi-qubit coupled spin systems in solids, with individual spin manipulation and readout.

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“…The flexibility in controlling their geometry by means of growth conditions and, in certain cases substrate patterning [2], has stimulated several studies on more complex structures able to add further potentialities to lensshaped or pyramidal nanostructures commonly obtained by the Stranski-Krastanov process. In this context, one relevant physical example are closely stacked quantum dots, either consisting of QD layers separated by a thin GaAs spacer [3][4][5], or without using any GaAs spacer (also known as columnar QDs [6] or quantum posts [7]).…”

Section: Introductionmentioning

confidence: 99%

Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics

Tasco

Usman²,

Giorgi

et al. 2014

Nanotechnology

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Abstract:Tailoring electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how a fine control of the strain-induced surface kinetics during the growth of vertically-stacked multiple layers of QDs allow to engineer their self organization process. Most noticeably, the present study shows that the underlying strain field induced along a QD stack can be modulated and controlled by time-dependent intermixing and segregation effects occurring after capping with GaAs spacer. This leads to a drastic increase of TM/TE polarization ratio of emitted light, not accessible from the conventional growth parameters. Our detailed experimental measurements supported by comprehensive multi-million atom simulations of strain, electronic, and optical properties, provide in-depth analysis of the grown QD samples leading us to depict a clear picture on atomic scale phenomena affecting the proposed growth dynamics and consequent QD polarization response.

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Record‐Low Inhomogeneous Broadening of Site‐Controlled Quantum Dots for Nanophotonics

Cited by 84 publications

References 26 publications

Self-Limiting Evolution of Seeded Quantum Wires and Dots on Patterned Substrates

Self-Limiting Evolution of Seeded Quantum Wires and Dots on Patterned Substrates

Super-Resolution Localization and Readout of Individual Solid State Qubits

Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics

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