Recorded Low Power Dissipation in Highly Reliable 1060-nm VCSELs for “Green” Optical Interconnection

Imai, Shoichi; Takaki, K.; Kamiya, Shotaro; Shimizu, H.; Yoshida, Junji; Kawakita, Y.; Takagi, Toshihisa; Hiraiwa, Koji; Suzuki, Toshihito; Iwai, Naoharu; Ishikawa, T.; Tsukiji, Naoki; Kasukawa, A.

doi:10.1109/jstqe.2011.2114643

Cited by 57 publications

(10 citation statements)

References 8 publications

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“…Excellent energy efficiency for high-speed 1060 nm VCSELs was also achieved by Furukawa [35]. Oxide-confined double intra-cavity structures are used here.…”

Section: Nm and 1060 Nm Vcselsmentioning

confidence: 90%

“…These QWs show a larger differential gain and lower transparency carrier density, allowing a larger D factor, and in turn, a larger modulation bandwidth. Work on high bit rate NRZ-OOK data transmission in MMF links was carried out for 980 to 1100 nm VCSELs [16,[32][33][34][35]45,46]. At 980 nm, the TU Berlin group demonstrated a 46 Gb/s NRZ-OOK data transmission at 85 • C [33].…”

Section: Nm and 1060 Nm Vcselsmentioning

confidence: 99%

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Progress in Short Wavelength Energy-Efficient High-Speed Vertical-Cavity Surface-Emitting Lasers for Data Communication

2023

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The current progress of energy-efficient high-speed VCSELs based on GaAs substrates is presented. Novel approaches for the design of VCSELs are presented, potentially leading to larger bandwidth bit rates and lower power consumption. The first approach is based on the optimization of the VCSEL photon lifetime. The second one introduces a novel design based on oxidizing the apertures from multiple etched holes of varying geometries. These designs are also essential for improving the energy efficiency of future modules by optimizing the match of the electronic driver and the photonic device.

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“…Excellent energy efficiency for high-speed 1060 nm VCSELs was also achieved by Furukawa [35]. Oxide-confined double intra-cavity structures are used here.…”

Section: Nm and 1060 Nm Vcselsmentioning

confidence: 90%

Section: Nm and 1060 Nm Vcselsmentioning

confidence: 99%

Progress in Short Wavelength Energy-Efficient High-Speed Vertical-Cavity Surface-Emitting Lasers for Data Communication

2023

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“…A key challenge concerning on-chip light sources is to obtain ultra-low energy consumption semiconductor lasers [18]. Vertical-cavity surface-emitting lasers (VCSELs) can operate with low-threshold and high-speed direct modulation [19], [20]. The VCSEL structure is suitable for vertical fiber coupling (rather than horizontal integration) and requires a 45°total reflection mirror to make an in-plane optical link [21].…”

Section: Introductionmentioning

confidence: 99%

Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode

Inoue¹,

Hiratani²,

Fukuda³

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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On-chip optical interconnection is a promising technology for wiring future large-scale integrated circuits, as a means to mitigate the considerable power dissipation of traditional wiring layers. Here, we fabricate an integrated optical link using a membrane distributed-feedback (DFB) laser and a p-i-n photodiode (PD) in a butt-jointed built-in coupling geometry. The optical link is formed on a Si substrate by benzocyclobutene bonding. The integrated DFB laser shows a low-threshold current of 0.48 mA. Light transmission between the DFB laser and the p-i-n PD is confirmed with static measurements of the optical link. The optical link has a 3-dB bandwidth of 11.3 GHz at a 2.73 mA DFB laser bias current and a -3 V p-i-n PD bias voltage. A data transmission experiment of the optical link is performed, using a nonreturn to zero, pseudorandom-bit-sequence with a word length of 2 31 -1 signals. With a DFB laser bias current of 2.5 mA, 10 Gbit/s data transmission with a bit-error-rate of 6 × 10 -7 is successfully achieved.

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“…Regarding the light sources, an available energy of 100 fJ=bit was estimated. 7) Recently, vertical-cavity surfaceemitting lasers (VCSELs), [8][9][10][11] microdisk lasers, 12,13) and photonic crystal (PhC) lasers [14][15][16] were reported as ultralowenergy light sources.…”

Section: Introductionmentioning

confidence: 99%

Thermal properties of lateral-current-injection semiconductor membrane Fabry–Perot laser under continuous-wave operation

Hiratani

Doi

Lee

et al. 2015

Jpn. J. Appl. Phys.

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For the realization of on-chip optical interconnects, light sources enabling ultralow power consumption and high-efficiency operation are required. With this aim, we fabricated lateral-current-injection-type membrane Fabry-Perot lasers with a threshold current of 3.5 mA and an external differential quantum efficiency of 11% under a room temperature-continuous wave (RT-CW) condition. To the best of our knowledge, we experimentally evaluated the thermal properties of a membrane laser for the first time. From the measurement, we obtained a thermal resistance of 330 K/W, which well agreed with the theoretical value of 340 K/W. From the theoretical analysis, it was found that a reduction of the benzocyclobutene thickness was effective for reducing the thermal resistance of the membrane laser. Finally, we determined that the increase in thermal resistance for short cavity (less than 50 µm) devices is not a problem because self-heating is small for low operation current.

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Recorded Low Power Dissipation in Highly Reliable 1060-nm VCSELs for “Green” Optical Interconnection

Cited by 57 publications

References 8 publications

Progress in Short Wavelength Energy-Efficient High-Speed Vertical-Cavity Surface-Emitting Lasers for Data Communication

Progress in Short Wavelength Energy-Efficient High-Speed Vertical-Cavity Surface-Emitting Lasers for Data Communication

Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode

Thermal properties of lateral-current-injection semiconductor membrane Fabry–Perot laser under continuous-wave operation

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