Recoverable Residual Image Induced by Hysteresis of Thin Film Transistors in Active Matrix Organic Light Emitting Diode Displays

Kim, Byeong‐Koo; Kim, Ohyun; Chung, Hongsuk; Chang, Jae Yoon; Ha, Yong‐Min

doi:10.1143/jjap.43.l482

Cited by 44 publications

(34 citation statements)

References 9 publications

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“…Hysteresis phenomenon is also poor characteristics of the a-Si:H TFTs. An effect of hysteresis, when poly-Si TFT is a pixel element of AMOLED, was shown [4]. Nevertheless, this was not reported as far as pixels based on a-Si:H TFT are concerned.…”

Section: Introductionmentioning

confidence: 97%

Hysteresis phenomenon of hydrogenated amorphous silicon thin film transistors for an active matrix organic light emitting diode

Lee

Nam

Shin

et al. 2006

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 97%

Hysteresis phenomenon of hydrogenated amorphous silicon thin film transistors for an active matrix organic light emitting diode

Lee

Nam

Shin

et al. 2006

Journal of Non-Crystalline Solids

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“…4(b). This darker residual image resulted from trapping of a considerable amount of holes where the bright pattern of the soccer ball had been displayed [13]. Any troublesome residual image was not observed in the AMOLED panel designed by the proposed four-TFT currentprogrammed pixel, as shown in Fig.…”

Section: Experimental Findings and Resultsmentioning

confidence: 94%

“…The residual image resulting from the hysteresis phenomenon of the LTPS-TFT, such that the previous display image remains apparent in the subsequent image, is another problem observed in the conventional two-TFT voltage-programmed pixel [13]. An OLED current in a two-TFT voltageprogrammed pixel is determined by a data voltage applied to the gate of a current-driving TFT (V GS ).…”

Section: Experimental Findings and Resultsmentioning

confidence: 99%

“…An undesired residual image is another problem observed in the conventional two-TFT pixel resulting from the hysteresis in the LTPS-TFT [13]. The previous display image remains apparent in the subsequent image [13].…”

Section: Introductionmentioning

confidence: 99%

“…The previous display image remains apparent in the subsequent image [13]. The elimination of this residual image is very important.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A New Poly-Si TFT Current-Mirror Pixel for Active Matrix Organic Light Emitting Diode

Lee

Nam

Kim³

et al. 2006

IEEE Electron Device Lett.

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A new poly-Si thin-film-transistor (TFT) currentmirror-active-matrix-organic-light-emitting-diode (AMOLED) pixel, which successfully compensates for the variation of the threshold voltage as well as mobility in the excimer laser annealed poly-Si TFT pixel, is designed and fabricated. The OLED current (I OLED ) of the proposed pixel does not depend on the operating temperature. When the temperature of pixel is increased from 27 • C to 60 • C, the I OLED of the new pixel circuit composed of four TFTs and one capacitor increases only about 1.5%, while that of a conventional pixel composed of two TFTs and one capacitor increases about 37%. At room temperature, nonuniformity of the I OLED in the proposed circuit was also considerably suppressed at around 9%. We have successfully fabricated a 1.2-in AMOLED panel (96 × 96 × red green blue)to evaluate the performance of the proposed pixel. A troublesome residual image caused by the hysteresis phenomenon of the poly-Si TFT was almost eliminated in the proposed AMOLED panel as a result of current programming.

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Reliable low‐power high‐performance low‐temperature polycrystalline thin‐film transistor technologies in bottom gate‐controlled device architectures for AMOLED displays

et al. 2023

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This paper presents a recent process for bottom gate-controlled lowtemperature polysilicon (LTPS) TFT technologies for reliable low-power highperformance AMOLED displays. The experimental and physics-based analysis leads to the pragmatic device design concept for LTPS TFT performance enhancement. The process integration of bottom (second) gate and top (first) gate metals, controlled by optimal two gates-based device structures, is explored in conjunction with improved poly crystallization and poly-Si/gateoxide interface by reducing defect density-of-state (DOS), especially in the grain boundaries of the channel region. We obtain optimal device performance, such as optimal sub-threshold slope, high driver current (Ion), and low leakage current (Ioff), in addition to enhanced device reliability characteristics. Numerical device simulations, supplemented by physics-based analysis, are performed to corroborate experimental results in fabricated TFTs and gain more physical insight into the bottom-gate LTPS device configuration to enable reliable low-power high-performance AMOLED display applications.bottom gate, density-of-state (DOS), drain-induced barrier lowering (DIBL), drive current (Ion), grain boundary, hot carrier injection (HCI), leakage current (Ioff), low-temperature polysilicon (LTPS) TFTs, negative bias temperature instability (NBTI), plasma-enhanced chemical vapor deposition (PECVD), short-channel effects (SCEs)

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Recoverable Residual Image Induced by Hysteresis of Thin Film Transistors in Active Matrix Organic Light Emitting Diode Displays

Cited by 44 publications

References 9 publications

Hysteresis phenomenon of hydrogenated amorphous silicon thin film transistors for an active matrix organic light emitting diode

Hysteresis phenomenon of hydrogenated amorphous silicon thin film transistors for an active matrix organic light emitting diode

A New Poly-Si TFT Current-Mirror Pixel for Active Matrix Organic Light Emitting Diode

Reliable low‐power high‐performance low‐temperature polycrystalline thin‐film transistor technologies in bottom gate‐controlled device architectures for AMOLED displays

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