Recovery behavior in negative bias temperature instability

Recovery after hot-carrier injection: Slow versus fast traps

“…BTI recovers from degradation at lower temperatures [1,5,6] and BTI can be attributed to recovery mechanisms like decharging of oxide traps (E a ≈ 0.2 eV) [1,7] and to a lesser degree the repassivation of interface traps. The recovery is described by a permanent (P ) and a recoverable part (R), where it is assumed that the decharging of oxide defects plays a major role for the time dependent recoverable part [8,9] and the time constants for detrapping from the defects are temperature dependent via an Arrhenius dependency [8,10]:…”

“…Here is k b the Boltzmann constant and ∆E B the tunneling barrier. This results in a log-like recovery behavior that can be described by an empirically found, universal relaxation equation [1,[10][11][12]:…”

Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs

“…Negative bias temperature instability (NBTI) affects device reliability in advanced CMOS technology. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] In general, threshold voltage degradation ΔV th induced by NBTI increases as channel length L decreases; [16][17][18][19][20][21][22] this trend indicates that the distribution of generated defects is nonuniform along the channel direction. [16][17][18][19][20][21][22] At the time of NBTI degradation, a devices that has short L is more influenced by the defects that occur in channel edge region than is a devices that has long L. This difference suggests that the change of defects may be greater near the channel edge than near the channel center.…”

Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal–oxide–semiconductor field-effect transistor

“…It usually monitors, under constant (gate) bias conditions, a small change ΔI in the device current I due to electron spin resonance. 13) Among several mechanisms causing EDMR, spin-dependent recombination (SDR) [14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] yields the highest signals (typically, ΔI=I = 10 −5 -10 −4 ) and is suitable for accessing deep centers such as MOS interface defects.…”