Rectification and intrinsic photocurrent of GaAs∕Si photodiodes formed with pulsed-laser deposition at 1064nm

Abstract

With a rate of 1nmperminute, thin-film p-GaAs has been deposited on n-Si with nanosecond laser pulses at 1064nm. The samples revealed rectification with an uncommon power dependence on the forward bias. Furthermore, we noticed that the intrinsic photocurrent spectra sensitively depend on the deposition time. Increasing this duration from one to three hours shifts the maximum of the spectral device response from GaAs to Si. The result stresses the flexibility of pulsed-laser deposition to alter device properties in extremely simple ways.

Electronic properties of p-GaAs deposited on n-Si with pulsed-laser deposition

“…We are aware of only one paper [5] containing data on GaAs-on-Si PLD before we started to work on the subject four years ago. Meanwhile, we demonstrated that PLD of p-type GaAs onto counter-doped Si produces a technologically appealing photo-responsive hetero-pair with sensitive bias dependence [6][7][8][9]. In the current work, we emphasize the dynamic rectification properties and the doping features of p-GaAs/n-Si structures formed with PLD at 355, 532, and 1064 nm.…”

Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

“…Ion implantation in polycor also has its influence [11,12]. The relation typical of the strong defective GaAs is implemented between LS parameters, which allows to conclude that structural disorder in the films on polycor is higher than in the films on silicon, while its efficiency is determined by the deposition conditions (figures 2-4) [6][7][8][9]12]. Fractional crystallization of film material, growth defect annihilation and recharge, clustering and enlargement of nanoparticles are probable reasons for changes in parameters  ph [11][12][13].…”

“…The unique properties of amorphocrystalline а-GaAs films deposited from RF-plasma by impulse methods [6,7], thermal deposition, co-evaporation of the elements [8] and laser deposition [9] enable to use them in the production of layers that match lattice parameters during the deposition of GaAs/Si and heterostructures on their basis. The characteristics of such films differ from с-GaAs due to their complex structure and strong defect disordering.…”

Self‐Aligned Nanolenses with Multilayered Ge/SiO2 Core/Shell Structures on Si (001)

“…Electro-optical devices, such as light-emitting diodes, vertical-cavity surface-emitting lasers, and photodetectors based on combinations of III-V semiconductor structures with conjugated silicon substrates have been demonstrated. [1][2][3][4] Although III-V semiconductors provide high coupling efficiency and low loss in fiber-optical communications, incorporating them in the well-established Si technology is difficult and expensive. It is therefore desirable to grow the active materials directly on a Si substrate.Owing to their having a narrower bandgap than Si, Si 1-x Ge x /Si heterostructures are used to fabricate optical devices that extend the range of applications of Si technology.…”