2018
DOI: 10.1038/s41598-018-27557-0
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Rectification and negative differential resistance via orbital level pinning

Abstract: A donor-acceptor system, 4-thiophenyl-azafulleroid (4TPA-C60), is investigated at the point of HOMO/LUMO resonance and beyond to understand how negative differential resistance (NDR) features may be observed in such systems. Our previous investigation showed that charge transfer between the occupied and unoccupied states at resonance hindered crossing of the HOMO and LUMO levels, thus preventing the formation of an NDR feature. In this work, it is shown that the negative differential resistance feature of 4TPA… Show more

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Cited by 13 publications
(11 citation statements)
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References 33 publications
(24 reference statements)
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“…For this region, the most probable cause for the transport could be the non-frontier states, which provide channels and the charge can be transported across the interface of metal/TMO. 41,42 Moreover, the trapped electrons can be swept out from their trapping centres and are stimulated toward the anodic side, colliding with various scattering centres within the ZnO. Finally, the thermionic emission comes into play when the voltage was reduced from −2.20 to 0 V, which is shown in Fig.…”
Section: Resultsmentioning
confidence: 96%
“…For this region, the most probable cause for the transport could be the non-frontier states, which provide channels and the charge can be transported across the interface of metal/TMO. 41,42 Moreover, the trapped electrons can be swept out from their trapping centres and are stimulated toward the anodic side, colliding with various scattering centres within the ZnO. Finally, the thermionic emission comes into play when the voltage was reduced from −2.20 to 0 V, which is shown in Fig.…”
Section: Resultsmentioning
confidence: 96%
“…Data is then sliced and processed using the automated algorithms described in the Supporting Information to produce the 2D density maps presented in Figure c,d. The I / V characteristics show a good ohmic behaviour up to relatively high biases (≈0.7 V, see the Supporting Information for linear‐scale plots) with no evident asymmetry or rectification arising from the presence of a molecular orbital with an energy sufficiently close to the Fermi levels of the gold electrodes under the two‐terminal conditions employed. This further confirms off‐resonant tunnelling as the charge‐transport mechanism, and this would also account for the observed relatively low conductance.…”
Section: Resultsmentioning
confidence: 97%
“…Current rectification (RR ≡ I(V )/|I(−V )| = 1) using single molecule devices, a topic pioneered by Aviram and Ratner, 1 continues to represent a major topic of molecular electronics. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] The present work is motivated by a confusion that persists on the physical origin of this phenomenon. It is generated by the fact that electrodes used to fabricate molecular junctions (planar substrate s and more or less sharp tip t) have often shapes different of each other.…”
Section: Introductionmentioning
confidence: 99%