Rectifying behavior in La2/3Sr1/3MnO3/MgO/SrRuO3 magnetic tunnel junctions

Abstract

We report first principles calculations of transport properties of the all-oxide La2/3Sr1/3MnO3/MgO/SrRuO3 magnetic tunnel junctions. A sizeable rectifying behavior which can be enhanced by increasing the MgO barrier thickness is predicted theoretically. For the device with 13 layers of MgO barrier, the positive current is about two orders of magnitude larger than the reverse leakage current. The rectifying behavior arises from the symmetry-filtering properties of the MgO barrier. This rectifying effect which is totally dominated by quantum tunneling could be used to design faster quantum devices such as tunnel diode and tunnel transistor.

Rectifying behavior of Ag/MgO/SrRuO<inf>3</inf> tunnel junction: First principles modeling of tunnel diode

“…In single-crystal Fe/MgO/Fe magnetic tunnel junction, the MgO barrier exhibits a symmetry-filtering effect, which is the key reason of the huge tunneling magnetoresistance effect [5,6]. Recently, a rectifying behavior in La 2/3 Sr 1/3 MnO 3 /MgO/SrRuO 3 magnetic tunnel junction has been predicted by first-principles calculations [7]. This rectifying behavior also arises from the symmetry-filtering properties of the MgO barrier and can be enhanced by increasing the barrier thickness.…”

Growth control of RF magnetron sputtered SrRuO3 thin films through the thickness of LaNiO3 seed layers

“…It exhibits orthorhombic perovskite structure with lattice constants of a ¼5.57 Å, b ¼5.53 Å, and c¼ 7.84 Å, which can also be described as a pseudo-cubic perovskite structure with lattice constants of a ¼3.93 Å [1]. Due to its superior conductivity and good chemical stability [2], SRO has gained much attention for multilayer device applications including electrodes and junction layers [3,4]. The study of SRO films grown in different directions is crucial and indispensable since the crystallographic orientation is one of the most critical parameters which influence the properties of ferroelectric films.…”

The transport properties and new device design: the case of 6,6,12-graphyne nanoribbons

“…[18][19][20][21] Therefore, exploring the properties of 6,6,12graphyne nanoribbons (NRs), similar to graphene nanoribbons (GNRs), is necessary, and new devices based on 6,6,12-graphyne NRs could be designed for more applications. [22][23][24][25][26] Method and structure Our rst-principles calculations are based on the ATOMISTIX TOOLKIT (ATK) package, [27][28][29] which adopts spin density functional theory combined with nonequilibrium Green's function. The core electrons are described by norm-conserving pseudopotentials, and the local-density approximation (LDA) is used for the exchange-correlation potential.…”