“…Amorphous metal oxide films exhibit a range of attractive properties for technological applications and are candidate materials for next-generation thin-film devices, such as thin-film transistors. − In particular, amorphous semiconducting oxides such as Zn–O, In–O, amorphous In–Ga–O, amorphous In–Ga–Zn–O, amorphous In–Sn–O, amorphous Zn–In–Sn–O, and amorphous Zn–Sn–O have garnered significant interest. ,,, Such materials have been shown to have high electron mobilities, , tunable conductivity, high optical transparency, , mechanical stress tolerance, ,, and compatibility with organic dielectric and photoactive materials, making them applicable for a number of applications. ,,− The performance of these materials is strongly correlated with the structure and disorder of the material. , However, the inherent complexity of amorphous oxide structures has hindered our understanding of chemical transformations and their influence on structure–property relationships.…”