Recursion relations for generalized Fresnel coefficients: Casimir force in a planar cavity

Tomaš, M. S.

doi:10.1103/physreva.81.044104

Cited by 11 publications

(6 citation statements)

References 20 publications

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“…According to the above structural analysis, the coat layers (in this article, coat layers simultaneously include both undercoat and overcoat layers) and ultrathin metal films deposited on the flexible mica are single-crystal films, which is an advantage compared with the polycrystalline or amorphous films reported in previous work. − ,, On the basis of the high-quality films, the interference behaviors of light in the sandwich structure was later investigated. Theoretically, the transmittance of light crossing over the multiple films can be understood by the generalized Fresnel equation, which is as follows where t j/m is the transmittance coefficient for a stack starting at layer j and ending in layer m, k represents any intermediate layer, and β l = ( k l2 – q 2 ) 1/2 and q = w sin(θ)/ c are the perpendicular and parallel components of the wave vector in layer l, respectively. For the structure in our work as shown in Figure a (real image) and S6a (3D atomic model), eq can be rewritten as follows Here, layer 1 is considered as an intermediate layer, t 1/5 and r 1/5 represent the total reflection and transmission coefficients of the layers from 1 to 5.…”

Section: Resultsmentioning

confidence: 99%

High-Quality AZO/Au/AZO Sandwich Film with Ultralow Optical Loss and Resistivity for Transparent Flexible Electrodes

Zhong¹,

Xie²,

Mai

et al. 2018

ACS Appl. Mater. Interfaces

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Transparent flexible electrodes are in ever-growing demand for modern stretchable optoelectronic devices, such as display technologies, solar cells, and smart windows. Such sandwich-film-electrodes deposited on polymer substrates are unattainable because of the low quality of the films, inducing a relatively large optical loss and resistivity as well as a difficulty in elucidating the interference behavior of light. In this article, we report a high-quality AZO/Au/AZO sandwich film with excellent optoelectronic performance, e.g., an average transmittance of about 81.7% (including the substrate contribution) over the visible range, a sheet resistance of 5 Ω/sq, and a figure-of-merit (FoM) factor of ∼55.1. These values are well ahead of those previously reported for sandwich-film-electrodes. Additionally, the interference behaviors of light modulated by the coat and metal layers have been explored with the employment of transmittance spectra and numerical simulations. In particular, a heater device based on an AZO/Au/AZO sandwich film exhibits high performance such as short response time (∼5 s) and uniform temperature field. This work provides a deep insight into the improvement of the film quality of the sandwich electrodes and the design of high-performance transparent flexible devices by the application of a flexible substrate with an atomically smooth surface.

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Section: Resultsmentioning

confidence: 99%

High-Quality AZO/Au/AZO Sandwich Film with Ultralow Optical Loss and Resistivity for Transparent Flexible Electrodes

Zhong¹,

Xie²,

Mai

et al. 2018

ACS Appl. Mater. Interfaces

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“…This can be understood using the generalized Fresnel equation for the reflection of the multilayer structure, which is given by30:…”

Section: Resultsmentioning

confidence: 99%

An antireflection transparent conductor with ultralow optical loss (<2 %) and electrical resistance (<6 Ω sq−1)

et al. 2016

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Transparent conductors are essential in many optoelectronic devices, such as displays, smart windows, light-emitting diodes and solar cells. Here we demonstrate a transparent conductor with optical loss of ∼1.6%, that is, even lower than that of single-layer graphene (2.3%), and transmission higher than 98% over the visible wavelength range. This was possible by an optimized antireflection design consisting in applying Al-doped ZnO and TiO2 layers with precise thicknesses to a highly conductive Ag ultrathin film. The proposed multilayer structure also possesses a low electrical resistance (5.75 Ω sq−1), a figure of merit four times larger than that of indium tin oxide, the most widely used transparent conductor today, and, contrary to it, is mechanically flexible and room temperature deposited. To assess the application potentials, transparent shielding of radiofrequency and microwave interference signals with ∼30 dB attenuation up to 18 GHz was achieved.

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“…The transmission of the OMO multilayer structure relies on destructive interference between light reflected at the different interfaces . From the generalized Fresnel equations for the reflection and transmission of the multilayer structure In these equations, r and t are the reflection and transmission coefficients of multilayers, respectively; j and m represent different layers; and k is an intermediate layer between them. From the refractive index n i and the extinction coefficient k i of the layer, the perpendicular components of the wave vector β i = ( k i 2 – q 2 ) 1/2 and the parallel components of the wave vector can be deduced.…”

Section: Resultsmentioning

confidence: 99%

Low-Temperature Oxide/Metal/Oxide Multilayer Films as Highly Transparent Conductive Electrodes for Optoelectronic Devices

Zhang

Liu

et al. 2021

ACS Appl. Energy Mater.

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Transparent conductors are essential for optoelectronic devices and flexible electronic devices. Oxide/metal/oxide (OMO) multilayer films with outstanding photoelectric performance have become a promising alternative for traditional transparent conductive oxides (TCOs). Most of the oxide films in OMO are deposited by magnetron sputtering or thermal evaporation processes, while the strong ion bombardment or high temperatures would deteriorate the device performance. For example, to fabricate a semitransparent solar cell, a top OMO will need to be deposited on the top of the semiconductor layer. Great care needs to be taken to reduce the damage to the semiconductor material to reduce the possible trapping of photogenerated charges. Recently, Mg and Ga codoped ZnO (MGZO) has been developed because of its wider spectral transmittance and less damage to the underlying functional layers in optoelectronics. However, the conductivity of MGZO remains limited. To produce low sheet resistance, the layer thickness needs to be several hundred nanometers. Here, we present high-quality MGZO films that are deposited by the reactive plasma deposition (RPD) technique with a soft growth process at room temperature (without intentional heating), providing broadband transmission and ultrathin pure Ag films prepared by magnetron sputtering at room temperature. Compared with the single MGZO, MGZO/Ag/MGZO multilayers effectively improve thin-film conductivity while maintaining high transmittances. The transfer matrix method (TMM) is used to determine the optimum thickness of each layer in OMO, and there is an excellent agreement between the simulation and experimental results. An MGZO/Ag/MGZO (40/9.5/45 nm) transparent electrode on a glass substrate presents an average transmittance of 87% (including glass) over a spectral range of 400−800 nm (relative transmittance, 94.7%), and sheet resistance (10 Ω sq −1 ). A semitransparent perovskite solar cell with an OMO top electrode exhibits a photoelectric conversion efficiency of about 11%. This work provides an insight to grow high-quality OMO films combining the RPD-TCO technique of high-rate deposition and low ion bombardment with ultrathin Ag films at room temperature, which pushes OMO forward to practical applications in more diverse optoelectronic devices.

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Recursion relations for generalized Fresnel coefficients: Casimir force in a planar cavity

Cited by 11 publications

References 20 publications

High-Quality AZO/Au/AZO Sandwich Film with Ultralow Optical Loss and Resistivity for Transparent Flexible Electrodes

High-Quality AZO/Au/AZO Sandwich Film with Ultralow Optical Loss and Resistivity for Transparent Flexible Electrodes

An antireflection transparent conductor with ultralow optical loss (<2 %) and electrical resistance (<6 Ω sq−1)

Low-Temperature Oxide/Metal/Oxide Multilayer Films as Highly Transparent Conductive Electrodes for Optoelectronic Devices

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