2010
DOI: 10.1007/s11164-010-0179-5
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Recycling of the indium scrap from ITO sputtering waste

Abstract: Indium components have been successfully recovered from indiumcontaining scrap powders collected by the sand-blasting of sputtering chamber walls. A two-step air-classifier was used for the classification of the scrap powder. The raw scrap powders containing 10 wt% indium were classified into 12 lots according to the revolutions per minute of a classifying wheel: 6,000, 8,000, 10,000, and 12,000 rpm. The enrichment of indium component was possible in fine overflow fraction, that is, the third classified fracti… Show more

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Cited by 28 publications
(11 citation statements)
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“…12 Hong et al reported the recycling of In from ITO-sputtering waste, which mostly deals with the enrichment of In-containing waste powder from a sputtering chamber wall. 13 Hsieh et al and Li et al proposed a pure indium recovery method from ITO scraps using a hydrometallurgical route. 14,15 Several waste resources have been studied for the recovery of In, such as ITO-scrap, [14][15][16] end-of-life liquid crystal displays and etching waste, 17,18 for prospective secondary resources for In.…”
Section: Introductionmentioning
confidence: 99%
“…12 Hong et al reported the recycling of In from ITO-sputtering waste, which mostly deals with the enrichment of In-containing waste powder from a sputtering chamber wall. 13 Hsieh et al and Li et al proposed a pure indium recovery method from ITO scraps using a hydrometallurgical route. 14,15 Several waste resources have been studied for the recovery of In, such as ITO-scrap, [14][15][16] end-of-life liquid crystal displays and etching waste, 17,18 for prospective secondary resources for In.…”
Section: Introductionmentioning
confidence: 99%
“…(1821) Indium recovery from ITO targets can involve crushing and heating, processes that may expose workers to indium-containing aerosols. (22,23) Interest is also growing in recovering indium from etching waste, (24,25) sputter shield residues, (26) LCD glass, (27,28) and electronic scrap. (29) …”
Section: Introductionmentioning
confidence: 99%
“…9,10 Moreover, the proportion of scraps generation during the sputtering process is large because only about 30% of the material can be deposited on the substrate. 11,12 A large amount of spent IGZO with low impurity content is produced from the residual of target magnetron sputtering, defective products in the sintering process, and residual products in the machining process. Consequently, a sustainable route for recovery of indium, gallium, and zinc, especially indium and gallium from spent IGZO, deserves more attention.…”
Section: ■ Introductionmentioning
confidence: 99%
“…As a channel material adopted in thin film transistors, indium–gallium–zinc oxide (IGZO) exhibits high electron mobility, excellent surface uniformity, good optical transparency, and a low-temperature deposition capability. Such advantages enable IGZO to be widely used in electronic and optoelectronic devices such as radio frequency identification tags, smart cards, and other types of flexible electronics in addition to display application. As important strategic metals, the reserves of indium and gallium in the Earth’s crust are low, and the extraction process is complicated. , Moreover, the proportion of scraps generation during the sputtering process is large because only about 30% of the material can be deposited on the substrate. , A large amount of spent IGZO with low impurity content is produced from the residual of target magnetron sputtering, defective products in the sintering process, and residual products in the machining process. Consequently, a sustainable route for recovery of indium, gallium, and zinc, especially indium and gallium from spent IGZO, deserves more attention.…”
Section: Introductionmentioning
confidence: 99%