In this paper, we demonstrate two types of new photodiode array (PDA) with fast readout speed and high stability to ultraviolet (UV) light exposure. One is a high full well capacity sensor specialized for absorption spectroscopy, the other one is a high sensitivity sensor for emission spectroscopy. By introducing multiple readout paths along the long side of the rectangle PD, both two PDAs have achieved more than 150 times faster readout speed compared with a general PDA structure with a single readout path along the short side of PD. By introducing a photodiode (PD) structure with a thin and steep dopant profile p + layer formed on a flattened Si surface, a higher stability of the light sensitivity to UV light exposure was confirmed compared with a general PD structure for conventional PDAs.