Red emitting LEDs formed by indium rich quantum dots incorporated in MQWs

Soh, C. B.; Liu, Wei; Chua, Soo Jin; Tan, Rayson J. N.; Ang, S. S.; Chow, Shui-Nee

doi:10.1002/pssa.201001028

Cited by 3 publications

(3 citation statements)

References 10 publications

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“…However, the red color is still challenging wavelength in InGaN QWs due to the limited In incorporation efficiency. Red emission can be observed only in a small portion (mostly the top region) of the micro/nanostructures, molecular beam epitaxy grown vertical structures, , or In-rich clusters (InGaN quantum dots) in an InGaN layer …”

mentioning

confidence: 99%

“…Red emission can be observed only in a small portion (mostly the top region) of the micro/nanostructures, 3 molecular beam epitaxy grown vertical structures, 10,20 or In-rich clusters (InGaN quantum dots) in an InGaN layer. 21 To improve the In incorporation efficiency, introduction of a thick InGaN layer, instead of thin QWs, can be one approach because the In incorporation efficiency is known to increase with the strain relaxation. 22−24 In addition, the thick InGaN layer is quite effective to reduce the carrier density by enlarging the active volume, and therefore, it is an efficient way to reduce the efficiency droop problem in group III-nitrides.…”

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confidence: 99%

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Red Emission of InGaN/GaN Double Heterostructures on GaN Nanopyramid Structures

Kim

Gong

et al. 2015

ACS Photonics

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We fabricated InGaN double-hetero structure (DHS) on the nanosized pyramid structure and successfully demonstrated efficient red color emission at 650 nm from this unique structure. The nanosized pyramid structure was fabricated by selective area growth method with nanoimprint. The different diffusion length of composite atoms and compositional pulling effect on the pyramid structure gave rise to not only compositional variation, but also high Incontent InGaN of more than 40%. The InGaN DHS on nanopyramids shows high internal quantum efficiency, sub-ns fast recombination time (negligible built-in electric fields), and less efficiency droop even with the high In content. These results are important to realize efficient red emission based on InGaN material, providing possibilities for efficient photonic devices operating at the long wavelength visible region.

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confidence: 99%

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confidence: 99%

Red Emission of InGaN/GaN Double Heterostructures on GaN Nanopyramid Structures

Kim

Gong

et al. 2015

ACS Photonics

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“…The red LEDs with self-assembled InGaN QDs with InGaN wetting layers were formed via the Stranski-Krastanov (SK) growth mode. InGaN QDs red LEDs with composite InGaN/AlN/GaN active regions were formed by TMIn treatment of the wetting InGaN layers with a peak emission wavelength of 661 nm at 60 mA [187]. The InGaN QDs were obtained via a growth interruption method.…”

Section: Quantum Dots (Qds)mentioning

confidence: 99%

Recent progress in red light-emitting diodes by III-nitride materials

Iida

Ohkawa

2021

Semicond. Sci. Technol.

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GaN-based light-emitting devices have the potential to realize all visible emissions with the same material system. These emitters are expected to be next-generation red, green, and blue displays and illumination tools. These emitting devices have been realized with highly efficient blue and green light-emitting diodes (LEDs) and laser diodes. Extending them to longer wavelength emissions remains challenging from an efficiency perspective. In the emerging research field of micro-LED displays, III-nitride red LEDs are in high demand to establish highly efficient devices like conventional blue and green systems. In this review, we describe fundamental issues in the development of red LEDs by III-nitrides. We also focus on the key role of growth techniques such as higher temperature growth, strain engineering, nanostructures, and Eu doping. The recent progress and prospect of developing III-nitride-based red light-emitting devices will be presented.

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Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates

et al. 2021

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Near-infrared electroluminescence of InGaN quantum dots (QDs) formed by controlled growth on photoelectrochemical (PEC) etched QD templates is demonstrated. The QD template consists of PEC InGaN QDs with high density and controlled sizes, an AlGaN capping layer to protect the QDs, and a GaN barrier layer to planarize the surface. Scanning transmission electron microscopy (STEM) of Stranski–Krastanov (SK) growth on the QD template shows high-In-content InGaN QDs that align vertically to the PEC QDs due to localized strain. A high-Al-content Al 0.9 Ga 0.1 N capping layer prevents the collapse of the SK QDs due to intermixing or decomposition during higher temperature GaN growth as verified by STEM. Growth of low-temperature (830°C) p-type layers is used to complete the p-n junction and further ensure QD integrity. Finally, electroluminescence shows a significant wavelength shift (800 nm to 500 nm), caused by the SK QDs’ tall height, high In content, and strong polarization-induced electric fields.

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Red emitting LEDs formed by indium rich quantum dots incorporated in MQWs

Cited by 3 publications

References 10 publications

Red Emission of InGaN/GaN Double Heterostructures on GaN Nanopyramid Structures

Red Emission of InGaN/GaN Double Heterostructures on GaN Nanopyramid Structures

Recent progress in red light-emitting diodes by III-nitride materials

Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates

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