Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates

Abstract

The integration of light emitting devices on silicon substrates has attracted intensive research for many years. In contrast to the InGaN light emitting diodes (LEDs) whose epitaxy technology on Si substrates is robust and mature, the epitaxy of other compound semiconductor light emitting materials covering the visible wavelength range on Si is still challenging. We have studied epitaxial growth of red InGaP light emitting materials on engineered Ge-on-Si substrates. Ge-on-Si was grown on 8'' Si substrates in a metal organic chemical vapour deposition (MOCVD) reactor using twostep growth and cycling annealing. Threading dislocation densities (TDDs) were controlled to as low as 10 6 /cm 2 by using As-doped Ge initiation. A GaAs buffer layer and lattice-matched InGaP LEDs were grown on the Ge-on-Si sequentially in the same MOCVD process and red LEDs are demonstrated. InGaP multiple-quantum-well LED structures were grown on full 8'' Ge-on-Si substrates and characterized.

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

“…The emission peak wavelength variation across the entire wafer is usually less than 2 nm. Electroluminescence operation was also demonstrated before [10]. However, the coefficients of thermal expansion (CET) of GaAs/InGaP and Ge are about twice of that of silicon [11].…”

GaInP nanowire arrays for color conversion applications

“…Obtaining efficient red-light emission is one of the main bottlenecks in III-nitride based RGB LEDs 38,39 . GaInP and AlGaInP alloys have been used in a wide range of optoelectronic applications involving efficient light emission or absorption in, e.g., solar cells 40 , window layers in solar cells 41 , LEDs 42 , and lasers 43 . Combining these materials with III-nitride LEDs could be of interest to cover the full visible range, for example by simply adding a red emitting (Al)GaInP layer on a blue or green LED and using a photoluminescence process to convert locally blue or green light to red light [28][29][30] .…”

Top-Down Fabrication of High Quality Gallium Indium Phosphide Nanopillar/disk Array Structures

“…III-V semiconductor materials show interesting properties for optoelectronic applications, e.g., high refractive index, direct bandgap, absorption properties and high carrier mobility. For example, GaInP and AlGaInP have been reported for a wide range of applications such as transistors [1], diodes [2], lasers [3], light emitting diodes (LEDs) [4], solar cells [5] and window layers in solar cells [6]. Top-down [7][8][9][10][11][12] and bottom-up [13][14][15][16] fabrication methods for structuring GaInP have been reported to fabricate nanostructured layers in order to enhance light-matter interactions.…”