Red luminescence from strain-induced GaInP quantum dots

Sopanen, Markku; Taskinen, M.-R.; Lipsanen, Harri; Ahopelto, Jouni

doi:10.1063/1.117270

Cited by 18 publications

(16 citation statements)

References 14 publications

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“…[5][6][7] InP SAQD growths have also been investigated on GaAs and GaP substrates by several groups. [8][9][10][11][12] Some of these workers have used InP SAQDs as stressors to induce QD formation in QW layers; others have used InP SAQDs as active layers. In the structures having active regions containing InP SAQDs, an InGaP cladding matrix is generally used.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates

Ryou

Dupuis

Reddy

et al. 2001

Journal of Elec Materi

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We report the characteristics of InP self-assembled quantum dots embedded in In 0.5 Al 0.5 P on GaAs substrates grown by metalorganic chemical vapor deposition. The InP quantum dots show increased average dot sizes and decreased dot densities, as the growth temperature increases from 475°C to 600°C with constant growth time. Above the growth temperature of 600°C, however, dramatically smaller and densely distributed self-assembled InP quantum dots are formed. The small InP quantum dots grown at 650°C are dislocation-free "coherent" regions with an average size of ~20 nm (height) and a density of ~1.5 × 10 8 mm -2 . These InP quantum dots have a broad range of luminescence corresponding to red or orange in the visible spectrum.

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Section: Introductionmentioning

confidence: 99%

Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates

Ryou

Dupuis

Reddy

et al. 2001

Journal of Elec Materi

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“…Strain-induced quantum dots have so far been fabricated on, e.g. GaAs [4,[15][16][17], InP [18][19][20] and Si [21] substrates. The models and results for InP/GaAs/InGaAs SIQD, reviewed in this work, can also guide the analysis and understanding of other types of SIQD.…”

Section: The Strain and The Confinement Of Carriersmentioning

confidence: 99%

“…The lack of inversion symmetry (Kane's band parameter B) of III-V semiconductors enters the bulk eight-band k · p Hamiltonian through the interaction between the conduction band (|S ), the valence bands (|X , |Y , |Z ) and the distant 15 states. It follows that the six-band BF envelope function theory, as formulated in [75], does not contain Kane's B parameter of the inversion asymmetry.…”

Section: ) Was Replaced With [E − H Rr (R)] → [E V (R) − E R (R)]mentioning

confidence: 99%

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

Boxberg

Tulkki

2007

Rep. Prog. Phys.

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Strain-induced quantum dots (SIQD) confine electrons and holes to a lateral potential minimum within a near-surface quantum well (QW). The potential minimum is located in the QW below a nanometre-sized stressor crystal grown on top of the QW. SIQD exhibit well-resolved and prominently atomic-like optical spectra, making them ideal for experimental and theoretical studies of mesoscopic phenomena in semiconductor nanocrystals.In this report we review the theory of strain-induced confinement, electronic structure, photonics and carrier relaxation dynamics in SIQD. The theoretical results are compared with available experimental data. Electronic structure calculations are mainly performed using the multiband envelope function approach. Many-body effects are discussed using a direct diagonalization method, albeit, for the sake of computational feasibility, within a two-band model.The QD carrier dynamics are discussed in terms of a master equation model, which accounts for the details of the electronic structure as well as the leading photon, phonon and Coulomb interaction processes. We also discuss the quantum confined Stark effect, the Zeeman splitting and the formation of Landau levels in external fields. Finally, we review a recent theory of the cooling of radiative QD excitons by THz radiation. In particular we discuss the resonance charge transfer of holes between piezoelectric trap states and the deformation potential minima. The agreement between the theory and experiment is fair throughout, but calls for further investigations.

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“…Similar to the InGaAs and InGaP QWD's strained by the InP QD's studied in Refs. [8][9][10][11][12][13] and the InGaAs QWD's strained by the InAs QD's [14], each InAs QD applies a 2-D potential to the QW layer within the lateral plane beneath it. Therefore, the strain-induced coupled QWD's are formed where the electrons and holes carriers are quantumconfined due to the 2-D potential in additional to the 1-D QW potential.…”

Section: Growth Of Coupled-quanum-well Dotsmentioning

confidence: 99%

“…quantum-well dots (QWD's), have been investigated in details since these structures can be defect-free [6][7][8][9][10][11][12][13]. In the past, most of the QWD's are based on the InGaAs and InGaP QW's strained by the InP QD's [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

InAs quantum dots coupled with strained InGaAs/GaAs coupled quantum-wells

Ding

Wang

et al. 2005

SPIE Proceedings

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We have studied the coupling between the InAs quantum dots and coupled quantum wells strained by the InAs quantum dots (i.e. coupled-quantum-well dots) by measuring photoluminescence spectra. By comparing the photoluminescence spectra of the coupled-quantum-well dots in which either the narrow well or wide well is grown next to the InAs quantum dots, we have evidenced the spatially inhomogeneous strains applied by the InAs quantum dots on the coupled quantum wells. Moreover, we have also investigated the three coupling regimes, i.e. when the dot level is higher than, lower than, and aligned to the lowest quantum-well transition. Based on our measurements, we conclude that the optical properties for the coupled-quantum-well dots have been significantly improved over the quantum dots.

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Red luminescence from strain-induced GaInP quantum dots

Cited by 18 publications

References 14 publications

Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates

Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

InAs quantum dots coupled with strained InGaAs/GaAs coupled quantum-wells

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