2015
DOI: 10.1016/j.jallcom.2015.05.033
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Red-shift in the InGaAsP/GaInP active region using impurity free vacancy diffusion induced quantum well intermixing

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Cited by 4 publications
(2 citation statements)
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“…7 shows the XPS spectra of commercial and self-made [34][35][36]. In the self-made Ga2O3 the peak at 26.25 eV can be attributed to binding energy of O2s [36][37]. In the self-made sample peak position was 0.38-0.43 eV higher than in the commercial catalyst.…”
Section: Xps Analysismentioning
confidence: 98%
See 1 more Smart Citation
“…7 shows the XPS spectra of commercial and self-made [34][35][36]. In the self-made Ga2O3 the peak at 26.25 eV can be attributed to binding energy of O2s [36][37]. In the self-made sample peak position was 0.38-0.43 eV higher than in the commercial catalyst.…”
Section: Xps Analysismentioning
confidence: 98%
“…In 3d peaks at around 443.8 eV and 451.4 eV relate to the In 3d5/2 and 3d3/2 peaks of metallic In 0 , respectively. [37,39] Positions of binding energies (BE) are almost the same for commercial and self-made In2O3 catalysts (BE shift 0.13-0.22). The portion of In 3+ was 3.8 % higher in the commercial In2O3 catalyst than in the self-made In2O3 catalyst.…”
Section: Figurementioning
confidence: 99%