Redistribution of carrier localization in InGaN-based light-emitting diodes for alleviating efficiency droop

Jeong, Hyun; Cho, Ga Hyun; Jeong, Mun Seok

doi:10.1016/j.jlumin.2022.119277

Cited by 6 publications

(3 citation statements)

References 27 publications

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“…As analyzed, it is caused by the "efficiency droop" of the monochrome green LED, which is a common undesirable phenomenon of GaInN/GaN LEDs. The so-called "efficiency droop" means the reduction of internal quantum efficiency (IQE) with increasing current densities [28]. As a controversial topic, several mechanisms have been proposed to explain the origin of this phenomenon, of which Auger recombination and carrier leakage are two most debated and popular ones [29], [30].…”

Section: A the Mixed Luminous Flux φ M And "Efficiency Droop"mentioning

confidence: 99%

Analysis and Tunable Models for Phosphor-Converted White Light-Emitting Diode Based on Spectral Compensation

et al. 2023

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The correlated color temperature (CCT) and color rendering index (CRI) are two significant indicators related to the color appearance and visual effects of illumination. This paper concentrates on dynamic dimming for phosphor-converted (PC) white LEDs to achieve tunable CCT and adequate CRI, via compensation of red/green spectra. The LED systems described have a simple configuration consisting of a PC white LED, a monochrome green LED and a monochrome red LED, which can be individually driven. Compared to individual PC white LEDs, both the spectral continuity and uniformity of the mixed white light are enhanced. The tunable dimming models are proposed by combination of spectral colorimetry and photo-electro-thermal (PET) theory, thus multi-physics effects are involved. From the modeling process and results, the nonlinear characteristics are observed. Experimental verifications present good agreement existing between calculations and measurements, both in terms of values and variation trends. These proposed models could be effective tools to figure out photometric characteristics and visual perception of illumination. On the other hand, they could provide schemes of reference to improve the illumination environment adapting to various special occasions and personal preferences.

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Section: A the Mixed Luminous Flux φ M And "Efficiency Droop"mentioning

confidence: 99%

Analysis and Tunable Models for Phosphor-Converted White Light-Emitting Diode Based on Spectral Compensation

et al. 2023

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“…In addition, the (In,Ga)N materials have the advantages of long lifetime and small size, − as well as the direct and tunable band gap . However, the general epitaxial substrates for growing (In,Ga)N materials are rigid, which means that they are quite difficult to be used for preparing flexible devices. , Furthermore, because of withstanding large mechanical deformation under bending conditions, the preparation processes for the flexible monolithic bifunctional device are easily damaged.…”

Section: Introductionmentioning

confidence: 99%

Flexible Monolithic Bifunctional Device Based on a Lift-off (In,Ga)N Film for Both Lighting and Self-Driven Detection

Hou,

Zhang,

Zhang

et al. 2024

ACS Omega

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Although flexible monolithic bifunctional devices are significant for next-generation optoelectronic devices, it is quite challenging to realize them. In this work, a flexible monolithic device with both functions of emission and self-driven detection has been proposed and demonstrated successfully. By a quick electrochemical etching method, the device is created using a liftoff (In,Ga)N film detaching from the epitaxial silicon substrate. The Si removal is beneficial for releasing stress and reducing the internal polarization effects under bending conditions, keeping the electroluminescence peak wavelength quite stable. With good flexibility, the monolithic bifunctional device can maintain both stable detection and emission performance under bending conditions. Furthermore, two functions of detection and lighting of the flexible monolithic device can not only be realized separately but also simultaneously. This means that the flexible monolithic device can detect and emit light at the same time. With the advantages of miniaturization and multifunctionality, this work paves an effective way to develop new monolithic multifunctional devices for both self-driven detection and wearable intelligent display.

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“…Due to their advantages of low energy consumption, long lifetime, small volume, etc., light-emitting diodes (LEDs) based on (In,Ga)N materials have been extensively utilized in the solid-state lighting, display and communication fields [ 1 , 2 , 3 ]. By adjusting the Indium (In) component, the energy bandgap of (In,Ga)N can be modulated from 0.67 eV (InN) to 3.4 eV (GaN), which covers the whole visible range [ 4 ]. (In,Ga)N can also be an excellent candidate for fabricating photodetectors (PDs) because of its high stability and direct and tunable bandgap, which can be applied in the systems of medical, communication and environmental monitoring [ 5 , 6 , 7 , 8 ].…”

Section: Introductionmentioning

confidence: 99%

Detach GaN-Based Film to Realize a Monolithic Bifunctional Device for Both Lighting and Detection

Dai

Zhou

et al. 2023

Nanomaterials

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Due to the emerging requirements of miniaturization and multifunctionality, monolithic devices with both functions of lighting and detection are essential for next-generation optoelectronic devices. In this work, based on freestanding (In,Ga)N films, we demonstrate a monolithic device with two functions of lighting and self-powered detection successfully. The freestanding (In,Ga)N film is detached from the epitaxial silicon (Si) substrate by a cost-effective and fast method of electrochemical etching. Due to the stress release and the lightening of the quantum-confined Stark effect (QCSE), the wavelength blueshift of electroluminescent (EL) peak is very small (<1 nm) when increasing the injection current, leading to quite stable EL spectra. On the other hand, the proposed monolithic bifunctional device can have a high ultraviolet/visible reject ratio (Q = 821) for self-powered detection, leading to the excellent detection selectivity. The main reason can be attributed to the removal of Si by the lift-off process, which can limit the response to visible light. This work paves an effective way to develop new monolithic multifunctional devices for both detection and display.

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Redistribution of carrier localization in InGaN-based light-emitting diodes for alleviating efficiency droop

Cited by 6 publications

References 27 publications

Analysis and Tunable Models for Phosphor-Converted White Light-Emitting Diode Based on Spectral Compensation

Analysis and Tunable Models for Phosphor-Converted White Light-Emitting Diode Based on Spectral Compensation

Flexible Monolithic Bifunctional Device Based on a Lift-off (In,Ga)N Film for Both Lighting and Self-Driven Detection

Detach GaN-Based Film to Realize a Monolithic Bifunctional Device for Both Lighting and Detection

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