Redistribution of ion-implanted impurities in silicon during diffusion in oxidizing ambients

On Redistribution of Boron during Thermal Oxidation of Silicon

“…Assumptions (iii) and (iv) are relaxed later in Wu et al model (11) and also in this work. Assumptions (iii) and (iv) are relaxed later in Wu et al model (11) and also in this work.…”

“…Since [11] is a boundary condition for the y direction only which must hold for any x and t, N'2 (z, y, t) has the same x dependence as N'I (x, y, t). Since [11] is a boundary condition for the y direction only which must hold for any x and t, N'2 (z, y, t) has the same x dependence as N'I (x, y, t).…”

“…Assumptions (iii) and (iv) are relaxed later in the Wu et aL model (11). The assumptions made by Huang and Welliver to solve the redistribution of boron during thermal oxidation are the following: (i) constant boron diffusion coefficient D within the silicon, (ii) negligibly small boron diffusion coefficient within the oxide, (iii) parabolic oxide growth rate Yox = ~/K,t, and (iv) initial profile is a delta function.…”

“…Nl(y,t) with assumption (iv) is the Wu et aL (11) did not include the Q(--y-mYox, t) term in their solution for N1 (y, t). Nl(y,t) with assumption (iv) is the Wu et aL (11) did not include the Q(--y-mYox, t) term in their solution for N1 (y, t).…”

“…Therefore, only the y-direction flux con- Oy ~=o m dt [A-12] and [11] follows [A-12]. Therefore, only the y-direction flux con- Oy ~=o m dt [A-12] and [11] follows [A-12].…”