Redistribution of phosphorus implanted into silicon doped heavily with boron

Tishkovskii, E. G.; Obodnikov, V.I.; Taskin, A. A.; Feklistov, K. V.; Seryapin, V. G.

doi:10.1134/1.1188043

Cited by 10 publications

(7 citation statements)

References 4 publications

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“…In Si predoped with donor dopants, the reduction in B diffusivity was attributed to the formation of donor-acceptor pairs which act as a trap for B. [13][14][15][16] For P dopants, the migration energy for B diffusion was shown to increase by about 0.2 eV in the presence of P. 17 The retardation of B diffusion was also observed in SiGe alloys. [18][19][20][21] Although the strain effect was considered to be the origin of the retarded B diffusion, experimental and theoretical results on the strain effect on B diffusion are quite controversial.…”

Section: Introductionmentioning

confidence: 79%

Chemical bonding and diffusion of B dopants in C-predoped Si

2009

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We investigate the atomic structure and electronic properties of various defect configurations which consist of B and C atoms in Si predoped with C impurities through first-principles density-functional calculations. In the absence of Si self-interstitials ͑I's͒, substitutional B and C atoms interact repulsively with each other, implying that B-C pairs at neighboring substitutional sites do not behave as a trap for B dopants. For I-B-C complexes, which can be formed in the presence of self-interstitials, we find that a C-B split interstitial, where the B and C atoms share a single lattice site along the ͓001͔ axis, is the most stable configuration. For several diffusion pathways, along which the B dopant diffuses from the C-B split-interstitial configuration with the ͓001͔ orientation to nearby tetrahedral and hexagonal sites, we find very high migration energies of about 3 eV. Thus, the diffusing B atom can be easily trapped in the neighborhood of C, resulting in the reduction in the B diffusivity. The range of the C trap potential is estimated to be about 7 Å. We also examine the diffusion of C from the stable C-B split interstitial, leaving the B dopant at a substitutional site, and find the migration energy to be much reduced to 2.16 eV. This result indicates that, as the C atom is dissociated, it acts as a trap for self-interstitials, leading to the reduction in self-interstitials which are available for B diffusion. In this case, the suppression of the B diffusivity is still expected, without degrading the electrical activity of the B dopants.

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Section: Introductionmentioning

confidence: 79%

Chemical bonding and diffusion of B dopants in C-predoped Si

2009

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“…Consequently, silicon simultaneously doped with B and P is of practical interests. The features of redistribution of the implanted P-atoms in a B-doped silicon were investigated [11] and it was shown that the high background boron doping (2.5 . 10 20 cm -3 ) drastically reduces the extension of the phosphorus profiles during the annealing.…”

Section: Analysis Of Published Datamentioning

confidence: 99%

Role of boron in formation of secondary radiation defects in silicon

Pagava

Chkhartishvili

Maisuradze

et al. 2015

EEJET

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Ґрунтуючись на колишні роботи авторів, досліджено роль домішок бору (B) у формуванні вторинних радіаційних дефектів в кристалах кремнію (Si). Залежності цих процесів від температури ізохронного відпалу (в інтервалі 80-600 °C) вивчені з використанням холлівських вимірювань температурних залежностей (в інтервалі 100-300 К) концентрації і рухливості дірок в кремній до і після опромінення електронами з енергією близько 8 МеВ при дозі 5•10 15 см-2 Ключові слова: кремній, легуючий бор, радіаційні дефекти і комплекси Основываясь на прежние работы авторов исследована роль примесей бора (B) в формировании вторичных радиационных дефектов в кристаллах кремния (Si). Зависимости этих процессов от температуры изохронного отжига (в интервале 80-600 °C) изучены с использованием холловских измерений температурных зависимостей (в интервале 100-300 К) концентрации и подвижности дырок в кремний до и после облучения электронами с энергией около 8 МэВ при дозе 5•10 15 см-2 Ключевые слова: кремний, легирующий бор, радиационные дефекты и комплексы

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“…Experiments involving B implantation into Si predoped with donor dopants such as P showed that the boron TED is suppressed. [17][18][19] The reduction of B diffusivity was attributed to the increase of the activation energy of the I s -B-P complex and the formation of the B-P pair acting as a trap for B diffusion. 20 The B diffusion was also shown to be retarded in strained SiGe alloys.…”

Section: Introductionmentioning

confidence: 99%

Chemical bonding effect of Ge atoms on B diffusion in Si

et al. 2007

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We perform first-principles density-functional calculations to study the chemical bonding effect of Ge atoms on the diffusion pathway and migration barrier of a B dopant in Si. The binding energy of a B-Ge pair is extremely small, thus, it is ruled out that the pairing of the B and Ge atoms immobilizes the B atom. When a Ge atom is located in the first neighborhood of a substitutional B, the B impurity is still likely to diffuse via an interstitialcy mechanism by forming a pair with a self-interstitial ͑I s ͒ without pair dissociation, similar to that previously suggested in pure Si. We find that the presence of the Ge atom increases the migration barrier by a sizable amount, which can affect the B diffusivity, while the formation energy of the stable I s -B-Ge complex is little affected. The effect of the Ge atom is most significant in the first neighborhood of the B interstitial, thus, the Ge chemical bonding effect plays a role in the retardation of B diffusion observed in SiGe alloys.

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Redistribution of phosphorus implanted into silicon doped heavily with boron

Cited by 10 publications

References 4 publications

Chemical bonding and diffusion of B dopants in C-predoped Si

Chemical bonding and diffusion of B dopants in C-predoped Si

Role of boron in formation of secondary radiation defects in silicon

Chemical bonding effect of Ge atoms on B diffusion in Si

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