Reduced propagation losses in quasi-phase-matched GaAs/AlGaAs waveguides

Yoshida, Shu; Hanashima, Kaori; Ohta, Ikuma; Matsushita, Tomonori; Kondo, Takashi

doi:10.1364/cleo_at.2013.jw2a.35

Cited by 2 publications

(2 citation statements)

References 4 publications

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“…We have shown that these corrugations are produced by anisotropic diffusion of III-group atoms on GaAs (100) surfaces during molecular beam epitaxy (MBE) regrowth. 25,26) To reduce the corrugation height, we optimized substrate temperature during MBE waveguide growth 27) and introduced chemical mechanical polishing (CMP) process during MBE growth process of an under cladding layer. 28) In this paper, we report propagation losses of three interacting waves and 3.4 μm QPM-DFG conversion efficiencies in periodically-inverted GaAs/AlGaAs waveguides fabricated with and without CMP.…”

Section: Introductionmentioning

confidence: 99%

Quasi-phase matched difference frequency generation in corrugation-reduced GaAs/AlGaAs periodically-inverted waveguides

Wang¹,

Matsushita²,

Matsumoto³

et al. 2019

Jpn. J. Appl. Phys.

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We have evaluated the conversion efficiency of difference frequency generation (DFG) around 3.4 μm in a periodically-inverted GaAs/AlGaAs waveguide whose corrugation height was reduced by using chemical mechanical polishing (CMP) process. The total propagation loss for interacting waves was decreased by suppressing the corrugations at interfaces between guiding and cladding layers. The internal conversion efficiency of DFG without Fabry–Perot enhancement was estimated to be 3.0% W−1 in a 2.1 mm long CMP waveguide. Guidelines for further increasing conversion efficiencies are also given.

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Section: Introductionmentioning

confidence: 99%

Quasi-phase matched difference frequency generation in corrugation-reduced GaAs/AlGaAs periodically-inverted waveguides

Wang¹,

Matsushita²,

Matsumoto³

et al. 2019

Jpn. J. Appl. Phys.

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“…Using this technique combined with MBE regrowth of GaAs and AlGaAs on periodically inverted GaAs(100) substrates by MBE growth using arsenic tetramers (As 4 ), we have fabricated periodically inverted GaAs/AlGaAs waveguiding wavelength conversion devices and demonstrated wavelength conversion via quadratic nonlinear optical effects. [6][7][8] However, the devices have suffered from propagation losses caused by corrugations on the interfaces between the guiding and cladding layers and periodic modulation of the Al composition. Anisotropic surface diffusion of Ga and Al atoms on GaAs(100) surfaces 9) is known to be responsible for generating the corrugations.…”

mentioning

confidence: 99%

Corrugation reduction in periodically inverted GaAs by molecular beam epitaxy growth using arsenic dimers

Narasaki

Matsushita

Kondo

2015

Appl. Phys. Express

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Molecular beam epitaxy (MBE) regrowth of GaAs on periodically inverted GaAs(100) substrates using arsenic dimers (As2) was studied. We found that we can reduce corrugations on the regrown GaAs by MBE growth using As2 at considerably higher substrate temperatures (∼450 °C) than in the case of growth using arsenic tetramers (∼300 °C). This result indicates that As2 MBE regrowth can be used to fabricate highly efficient GaAs/AlGaAs wavelength conversion waveguiding devices owing to a reduction in the propagation losses caused by interface corrugations. We also estimated the diffusion lengths of Ga atoms coexisting with As2 on GaAs(100) surfaces from experimental thickness variations on the basis of a diffusion equation analysis.

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Reduced propagation losses in quasi-phase-matched GaAs/AlGaAs waveguides

Cited by 2 publications

References 4 publications

Quasi-phase matched difference frequency generation in corrugation-reduced GaAs/AlGaAs periodically-inverted waveguides

Quasi-phase matched difference frequency generation in corrugation-reduced GaAs/AlGaAs periodically-inverted waveguides

Corrugation reduction in periodically inverted GaAs by molecular beam epitaxy growth using arsenic dimers

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