Reduced subpicosecond electron relaxation in GaNxAs1−x

Sinning, Steffen; Dekorsy, Thomas; Helm, M.; Mußler, Gregor; Däweritz, L.; Ploog, K. H.

doi:10.1063/1.1904709

Cited by 5 publications

(4 citation statements)

References 14 publications

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“…On the other hand, the numerical fitting reveals that the MHL of 2 × 10 17 cm –3 doped NWs is about 0.5 ps (Figure c), while no significant further drop of MHL is found in the 6 × 10 17 cm –3 doped NWs (Figure d). This is reasonable because the intraband relaxation time is of subpicosecond scale for photocarriers in GaAs …”

Section: Resultsmentioning

confidence: 94%

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Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping

Xia¹,

Lu²,

Li³

et al. 2012

ACS Nano

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The doping-dependent photoconductive properties of individual GaAs nanowires have been studied by conductive atomic force microscopy. Linear responsivity against the bias voltage is observed for moderate n-doped GaAs wires with a Schottky contact under illumination, while that of the undoped ones exhibits a saturated response. The carrier lifetime of a single nanowire can be obtained by simulating the characteristic photoelectric behavior. Consistent with the photoluminescence results, the significant drop of minority hole lifetime, from several hundred to subpicoseconds induced by n-type doping, leads to the distinct photoconductive features. Moreover, by comparing with the photoelectric behavior of AlGaAs shelled nanowires, the equivalent recombination rate of carriers at the surface is assessed to be >1 × 10(12) s(-1) for 2 × 10(17)cm(-3) n-doped bare nanowires, nearly 30 times higher than that of the doping-related bulk effects. This work suggests that intentional doping in nanowires could change the charge status of the surface states and impose significant impact on the electrical and photoelectrical performances of semiconductor nanostructures.

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Section: Resultsmentioning

confidence: 94%

“…This is reasonable because the intraband relaxation time is of subpicosecond scale for photocarriers in GaAs. 40 Bulk and Surface Effects on Carrier Lifetime by n-Type Doping. It is known that doping may degrade the optical and photoelectric properties by introducing contamination and lattice defects in semiconductors.…”

Section: Resultsmentioning

confidence: 99%

Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping

Xia¹,

Lu²,

Li³

et al. 2012

ACS Nano

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“…2 We note that the time-resolved transmission change with a decay time around 0.6 ps was reported in GaAsN film annealed at 800 C, which was explained by the carrier relaxation processes through the electron-optical phonon scatterings. 16 While the implanted N þ -atoms induce strongly localized states, the segregation and clustering of the defects that occurs at high T A can reduce the number of point defects and slow down the trapping process. The slow component that appears for high temperature annealing may have originated from the crystal phase that was formed by the annealing process.…”

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confidence: 99%

Coherent transverse-optical phonon generation induced by lattice defects in nitrogen-ion-implanted GaAs

Kim

Ryu

Kim

et al. 2013

Applied Physics Letters

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We describe our observation of coherent phonon oscillations of X-point zone-boundary transverseoptical (TO) mode, TO(X), in nitrogen-ion-implanted GaAs that has been annealed at high temperatures. With the TO(X) mode being forbidden from the Raman selection rule in pure zinc-blende GaAs, the lattice defects have provided additional momentum for phonon generation. Annealing-induced structural modifications were demonstrated through X-ray diffraction, transmission electron microscopy, and Raman scattering measurements. The polarization dependence of the TO(X) mode was compared with that of the longitudinal optical mode, and the temperature dependence of the TO(X) phonon dephasing was also investigated. V

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“…This ultrafast PL decay, which is typical for the high energy side of the spectrum is related to carrier cooling 31 . Note that intraband scattering of photoexcited electrons occurs on an even shorter timescale, namely on a sub-ps scale 32 . These fast parts of the dynamics are not within the scope of this study.…”

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confidence: 99%

Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN

Eßer

Winnerl

Patanè

et al. 2016

Applied Physics Letters

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We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We nd ultra-short decay times on the high-energy side and long decay times on the low-energy side of the photoluminescence spectrum. This asymmetry can be explained by the existence of an additional non-radiative energy transfer channel and is consistent with previous studies on intrinsic GaAsN epilayers. However, the determined maximum decay times of GaAsN:Si are signi cantly reduced in comparison to undoped GaAsN. The determined excitonic mobility edge energy constantly decreases with increasing N content, in agreement with the two-level band anticrossing model.

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Reduced subpicosecond electron relaxation in GaNxAs1−x

Cited by 5 publications

References 14 publications

Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping

Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping

Coherent transverse-optical phonon generation induced by lattice defects in nitrogen-ion-implanted GaAs

Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN

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