Reducing the cooling requirements of mid-wave IR detector arrays

New concepts in infrared photodetector designs

“…[48][49][50][51][52][53][54][55] While the idea of nBn design has originated with bulk InAs materials, 48 its demonstration using T2SL-based materials facilitates the experimental realization of the barrier detector concept with better control of band edge alignments. 56 Klipstein et al 57 have considered a wide family of barrier detectors, which they divide into two groups: XB n n and XB p p detectors (see Fig. 25).…”

“…The barrier detector can be implemented in different semiconductor materials. Its practical application has been demonstrated in InAs, 48,50,60 InAsSb, 51,53,57,61,62 InAs/GaSb T2SLs, 49,52,58,59 and recently, also in HgCdTe ternary alloy. 63,64 The main requirement which must be met to construct the barrier detector structure is "zero" band offset in proper FIG.…”

Barrier infrared detectors

“…Wide family of barrier detectors has been considered by Klipstein et al [13]. They can be divided in two groups: XB n n and XB p p detectors (see Fig.…”

“…When X is composed of the same mate− rial as the active layer, both layers have the same symbol (denoting the doping type), otherwise it is denoted as C (with the doping type as a subscript) (after Ref. 13). …”

“…Absence of a depletion region offers a way for materials with relatively poor SR lifetimes, such as all III−V compounds, to overcome the disadvantage of large depletion dark currents. Its practical application has been demonstrated in InAs [4,7,16], InAsSb [8,10,13,17,18] InAs/GaSb T2SLs [5,9,14,15] and recently, also in HgCdTe ternary alloy [19,20]. The main requirement which must be met to construct the barrier detector structure is "zero" band offset in a pro− per band depending on carrier type which is to be blocked.…”