Reducing the effective height of a Schottky barrier using low-energy ion implantation

Shannon, J.M.

doi:10.1063/1.1655220

Cited by 152 publications

(26 citation statements)

References 2 publications

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“…1 for comparison. These measurements agree well with others reported in the literature for similar Ni-Si contacts [9]. The rectifying behavior is much weaker compared to that of electrodeposited SBs, with a considerably higher reverse bias current.…”

Section: Resultssupporting

confidence: 82%

Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers

Kiziroglou

Zhukov

et al. 2006

Solid State Communications

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Ni-Si Schottky barriers are fabricated by electrodeposition using n on n+ Si substrates. I -V , C-V and low temperature I -V measurements are presented. A high-quality Schottky barrier with extremely low reverse leakage current is revealed. The results are shown to fit an inhomogeneous barrier model for thermionic emission over a Schottky barrier proposed by Werner and Guttler [J.H. Werner, H.H. Guttler, Barrier inhomogeneities at Schottky contacts, J. Appl. Phys. 69 (3) (1991) 1522-1533]. A mean value of 0.76 V and a standard deviation of 66 mV is obtained for the Schottky barrier height at room temperature with a linear bias dependence. X-ray diffraction and scanning electron microscopy measurements reveal a polycrystalline Ni film with grains that span from the Ni-Si interface to the top of the Ni layer. The variation in Ni orientation is suggested as a possible source of the spatial distribution of the Schottky barrier height.

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Section: Resultssupporting

confidence: 82%

Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers

Kiziroglou

Zhukov

et al. 2006

Solid State Communications

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“…19 I-V SI characteristics at room temperature of real Pt-SnO 2 junctions can be usually modeled with the help of thermionic emission and tunneling assisted by interface states. According to this combined model, the contact barrier height is reduced and the current increases with increasing bias according to the following expression: 20,21 …”

Section: Modeling Of Schottky Barriers and Determination Of Nanowimentioning

confidence: 99%

Electrical properties of individual tin oxide nanowires contacted to platinum electrodes

et al. 2007

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A simple and useful experimental alternative to field-effect transistors for measuring electrical properties ͑free electron concentration n d , electrical mobility , and conductivity ͒ in individual nanowires has been developed. A combined model involving thermionic emission and tunneling through interface states is proposed to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion beam techniques. Current-voltage ͑I-V͒ plots of single nanowires measured in both two-and four-probe configurations revealed high contact resistances and rectifying characteristics. The observed electrical behavior was modeled using an equivalent circuit constituted by a resistance placed between two back-to-back Schottky barriers, arising from the metal-semiconductor-metal ͑M-S-M͒ junctions. Temperature-dependent I-V measurements revealed effective Schottky barrier heights up to ⌽ BE = 0.4 eV.

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“…The presence of shallow Al acceptor-type traps at the silicide/Si interface will lead to a sharp upward bending of the silicon valence band [12], resulting in the narrowing of the barrier depletion width, leading to an increase in the tunneling probability of the holes and contribute to the lowering of the effective  B p .…”

Section: Hole Sbh (Ev)mentioning

confidence: 99%

Schottky barrier height modulation with Aluminum segregation and pulsed laser anneal: A route for contact resistance reduction

Koh

Liu

et al. 2010

2010 International Workshop on Junction Technology Extended Abstracts

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We report the first demonstration of a contact technology employing a combination of low energy Aluminum (Al) ion implantation and pulsed laser anneal (PLA) to form nickel silicide (NiSi) with low hole effective Schottky barrier height ( B p ) on Si. First, the Al implant energy is reduced over prior work to ensure compatibility with thinner NiSi contacts. Second, the effect of PLA on silicide contact formation is investigated. Third, we show that increasing Al concentration at the silicide/Si interface while keeping the Al concentration within the silicide low is vital for reducing  B p . Successful implementation of the contact technology leads to ~77 % reduction in  B p , achieving a low  B p of 0.104 eV. This opens up new options to lower  B p with reduced thermal budget for future technology generations.

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Reducing the effective height of a Schottky barrier using low-energy ion implantation

Cited by 152 publications

References 2 publications

Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers

Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers

Electrical properties of individual tin oxide nanowires contacted to platinum electrodes

Schottky barrier height modulation with Aluminum segregation and pulsed laser anneal: A route for contact resistance reduction

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