Reduction in intermediate layer thickness of CoCrPt–SiO2 perpendicular recording media by using Ru–SiO2

Abstract

Articles you may be interested inMicrostructure and magnetic properties of Co Cr Pt -Si O 2 perpendicular recording media with synthetic nucleation layers

Microstructure and switching mechanism of stacked CoCrPt–SiO2 perpendicular recording media

“…CoCrPt-oxide-based perpendicular recording layers (RL) are currently used in the hard disk drives owing to their small grain size, square hysteresis loops, low noise, high anisotropy, and improved thermal stability-among others [1][2][3][4][5][6][7][8][9][10][11][12][13]. In order to magnetically isolate the RL grains and shrink grain sizes further, several routes such as dopants, increased oxygen content and high gas pressure sputtering of the media layer, or of the intermediate layers (IL) have been proposed in the past [5,6,[11][12][13].…”

“…In order to magnetically isolate the RL grains and shrink grain sizes further, several routes such as dopants, increased oxygen content and high gas pressure sputtering of the media layer, or of the intermediate layers (IL) have been proposed in the past [5,6,[11][12][13]. However, these methods often affect the magnetic anisotropy and thermal stability of the grains, due to the superparamagnetic size effects as well as due to the incorporation of oxygen into the grain interior.…”

Growth of Ru–SiO2 underlayer for Co72Pt28–SiO2 nanocomposite films

“…Further increasing SiO 2 content to vol.10% did not lead to a further reduction in the grain size for 1.3 Pa deposition. The reduction of grain size was attributed to the smaller Ru grains and the enhanced oxide segregation in the initial growth region of the Co 72 Pt 28 layer . The average grain size of Co 72 Pt 28 layer with Ru t layer deposited at 1.3 Pa was smaller than that at 0.4 Pa when SiO 2 content was smaller than 20 vol.%.…”

4.8 nm diameter Ru grains grown on a large-grain seed layer for perpendicular magnetic recording media

“…Finally, the structure of the Ru-SiO 2 layer [10], which corresponds to IL2 in figure 1, on Ru/Mg stacked layers was investigated. Figures 5(a) and (b) show plane-view TEM images and (c) shows a histogram for the grain diameters of the Ru-SiO 2 layer for a sample with a stacking structure of the Ru 93 -(SiO 2 ) 7 (15 nm)/Ru (5 nm)/Mg (20 nm)/Ta (5 nm)/substrate.…”