Reduction of Copper Oxide Films by an Atmospheric-Pressure Inductively Coupled Plasma Microjet

Tajima, Shogo; Tsuchiya, Shouichi; Matsumori, Masashi; Nakatsuka, Shigeki; Ichikı, Takanori

doi:10.14723/tmrsj.35.621

Cited by 10 publications

(5 citation statements)

References 15 publications

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“…Cu 2 O is normally situated at the distance of 2 eV from the Cu peak at 335.4 eV. CuO, which should lie 1-eV higher than the Cu peak, is not detected [ 33 , 38 , 39 ].…”

Section: Resultsmentioning

confidence: 99%

“…Cu2O is normally situated at the distance of 2 eV from the Cu peak at 335.4 eV. CuO, which should lie 1-eV higher than the Cu peak, is not detected [33,38,39]. Figure 7 summarizes the atomic concentrations of the elements above before and after SAM desorption, in the initial state and after the cleaning step.…”

Section: Impact Of the Desorption Parameters On The Chemical Composit...mentioning

confidence: 99%

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Cu-Cu Thermocompression Bonding with a Self-Assembled Monolayer as Oxidation Protection for 3D/2.5D System Integration

et al. 2023

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Cu-Cu direct interconnects are highly desirable for the microelectronic industry as they allow for significant reductions in the size and spacing of microcontacts. The main challenge associated with using Cu is its tendency to rapidly oxidize in air. This research paper describes a method of Cu passivation using a self-assembled monolayer (SAM) to protect the surface against oxidation. However, this approach faces two main challenges: the degradation of the SAM at room temperature in the ambient atmosphere and the monolayer desorption technique prior to Cu-Cu bonding. In this paper, the systematic investigation of these challenges and their possible solutions are presented. The methods used in this study include thermocompression (TC) bonding, X-ray photoelectron spectroscopy (XPS), shear strength testing, scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDX). The results indicate nearly no Cu oxidation (4 at.%) for samples with SAM passivation in contrast to the bare Cu surface (27 at.%) after the storage at −18 °C in a conventional freezer for three weeks. Significant improvement was observed in the TC bonding with SAM after storage. The mean shear strength of the passivated samples reached 65.5 MPa without storage. The average shear strength values before and after the storage tests were 43% greater for samples with SAM than for the bare Cu surface. In conclusion, this study shows that Cu-Cu bonding technology can be improved by using SAM as an oxidation inhibitor, leading to a higher interconnect quality.

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“…Cu 2 O is normally situated at the distance of 2 eV from the Cu peak at 335.4 eV. CuO, which should lie 1-eV higher than the Cu peak, is not detected [ 33 , 38 , 39 ].…”

Section: Resultsmentioning

confidence: 99%

Section: Impact Of the Desorption Parameters On The Chemical Composit...mentioning

confidence: 99%

Cu-Cu Thermocompression Bonding with a Self-Assembled Monolayer as Oxidation Protection for 3D/2.5D System Integration

et al. 2023

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“…The new surface, therefore, appear with hills and craters as the surface of a sponge. [ 39 ] This morphology is more visible on grain boundaries. The darker appearance of these holes in the SEM image may be due to the morphology or to the presence on not completely reduced oxide at the base of the crater.…”

Section: Resultsmentioning

confidence: 99%

Plasmon‐Assisted Operando Self‐Healing of Cu₂O Photocathodes

Ross

Ruiz‐Martinez

Rizzi

et al. 2022

Advanced Sustainable Systems

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The ongoing problems in western countries connected to the global energy supply urgently force the research community to strive in finding new methodologies for boosting the functional properties of earth‐abundant raw materials, for example, the largely available cupreous oxide. In this work, the authors focus on the surface sensitization of this metal oxide semiconductor with an argon plasma treatment, that promotes, during photoelectrochemical hydrogen evolution, the formation of metallic copper nanostructures. Interestingly, these copper‐based hierarchical nano‐branches, having inherent plasmonic properties, are at the origin of the improved shelf‐life of the modified Cu2O photocathode, as is demonstrated by advanced structural and photophysical analyses. This proposed photophysical mechanism for an operando electrode stabilization suggests that a self‐healing process can occur within the Cu2O/plasmonic Cu heterostructure. These findings pave the way to the implementation of new, easy‐to‐make strategies to improve the properties of low‐cost, low‐toxicity energy materials.

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“…[1][2][3] To minimize the formation of voids inside the joint, it is important to remove any oxide film from the soldered part and improve the solder wettability on the metal surface. 4) Although the hydrogen-based oxide film removal technology is considered an efficient method for removing metal oxide films, [5][6][7][8][9] hydrogen reduction requires a high temperature of nearly 300 °C, making the application of lead-free solders with low mp a challenging task. In contrast, the removal of oxide films by formic acid, which exhibits higher efficiency at lower temperatures than hydrogen reduction, has recently attracted considerable attention from researchers.…”

Section: Introductionmentioning

confidence: 99%

Reduction of copper oxide by formic acid in a narrow gap under various conditions

Ozawa

Maruyama

Shibata

2023

Jpn. J. Appl. Phys.

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In this study, the reduction rate of a copper oxide film by formic acid gas was measured under various conditions using a vacuum chamber and ellipsometer. The results revealed that the reduction rate of the oxide film in a narrow gap on the copper plate surface covered by a glass plate was 1.2 times greater than that on the surface of an uncovered copper plate. In addition, the reduction rate determined for a mixture of formic acid gas with a partial pressure of 1000 Pa and N2 gas with a partial pressure of 19000 Pa was approximately two times lower than that measured for pure formic acid gas supplied at a pressure of 1000 Pa. Meanwhile, increasing the partial pressure of formic acid increased the copper oxide reduction rate. Finally, the reduction rates calculated using a direct simulation Monte Carlo method were in good agreement with the experimental data.

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Reduction of Copper Oxide Films by an Atmospheric-Pressure Inductively Coupled Plasma Microjet

Cited by 10 publications

References 15 publications

Cu-Cu Thermocompression Bonding with a Self-Assembled Monolayer as Oxidation Protection for 3D/2.5D System Integration

Cu-Cu Thermocompression Bonding with a Self-Assembled Monolayer as Oxidation Protection for 3D/2.5D System Integration

Plasmon‐Assisted Operando Self‐Healing of Cu₂O Photocathodes

Reduction of copper oxide by formic acid in a narrow gap under various conditions

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Reduction of Copper Oxide Films by an Atmospheric-Pressure Inductively Coupled Plasma Microjet

Cited by 10 publications

References 15 publications

Cu-Cu Thermocompression Bonding with a Self-Assembled Monolayer as Oxidation Protection for 3D/2.5D System Integration

Cu-Cu Thermocompression Bonding with a Self-Assembled Monolayer as Oxidation Protection for 3D/2.5D System Integration

Plasmon‐Assisted Operando Self‐Healing of Cu2O Photocathodes

Reduction of copper oxide by formic acid in a narrow gap under various conditions

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Plasmon‐Assisted Operando Self‐Healing of Cu₂O Photocathodes