Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer

Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping

“…To avoid this, inserting a thin AlN spacer layer between the AlGaN barrier and GaN channel layers effectively increases both 2DEG concentration and electron mobility due to enhanced 2DEG confinement. 6,7) The high performance of some HEMTs using this structure has been demonstrated. [4][5][6]8) The very wide bandgap of the AlN spacer layer in this structure, however, increases the potential barrier in ohmic contact region and significantly degenerates contact resistance, making it difficult for sufficient current to flow from the 2DEG in the channel to source/drain (S/D) electrodes.…”

“…6,7) The high performance of some HEMTs using this structure has been demonstrated. [4][5][6]8) The very wide bandgap of the AlN spacer layer in this structure, however, increases the potential barrier in ohmic contact region and significantly degenerates contact resistance, making it difficult for sufficient current to flow from the 2DEG in the channel to source/drain (S/D) electrodes.…”

Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

“…1,2 The benefits of this interlayer have been experimentally verified in fabricated AlGaN/AlN/GaN HFET devices. 3,4 The insertion of a thin AlN barrier interlayer improves transport properties of the two-dimensional electron gas ͑2DEG͒ and the mobility substantially increases due to a suppression of the alloy scattering. 5 The polarization Coulomb field scattering related to the strain variation in the AlGaN barrier layer has an important influence on the 2DEG electron mobility in the circular AlGaN/GaN HFET devices.…”

Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

“…Owing to potential applications in high power and high frequency electronic devices associated with outstanding material properties, AlGaN/GaN heterostructure field effect transistors (HFETs) have attracted extensive research to improve the device performance [ 1 - 3 ]. The strained AlGaN/AlN/GaN heterostructure with a thin AlN interlayer has been the popular material structure for AlGaN/GaN HFETs due to the improved transport properties of two-dimensional electron gas (2DEG) and electron mobility [ 4 , 5 ]. According to our former report, it is found that the ratio of gate length to drain-to-source distance has an important influence on electron mobility and determines the dominant scattering mechanism in the AlGaN/AlN/GaN HFETs with the drain-to-source distance of 100 μm [ 6 ].…”