Reduction of nonradiative recombination in InGaN epilayers grown with periodical dilute hydrogen carrier gas

Wang, Hailong; Lv, Zesheng; Chen, Chong; Zhang, Supeng; Bin, Li; Wu, Zhaohui; Jiang, Hao

doi:10.1016/j.apsusc.2019.07.072

Cited by 12 publications

(8 citation statements)

References 45 publications

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“…Figure 2(b) shows a trench defect generated in the red DQWs, which was triggered by In segregation. 36,37 These trench defects led to decreased internal quantum efficiency of the active region. 23,36,37 Degradation of the InGaN active region severely affects the LED performance.…”

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confidence: 99%

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633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress

Iida

Zhuang

Kirilenko

et al. 2020

Applied Physics Letters

116

113

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This work investigates the influence of residual stress on the performance of InGaN-based red light-emitting diodes (LEDs) by changing the thickness of the underlying n-GaN layers. The residual in-plane stress in the LED structure depends on the thickness of the underlying layer. Decreased residual in-plane stress resulting from the increased thickness of the underlying n-GaN layers improves the crystalline quality of the InGaN active region by allowing for a higher growth temperature. The electroluminescence intensity of the InGaN-based red LEDs is increased by a factor of 1.3 when the thickness of the underlying n-GaN layer is increased from 2 to 8 lm. Using 8-lm-thick underlying n-GaN layers, 633-nm-wavelength red LEDs are realized with a light-output power of 0.64 mW and an external quantum efficiency of 1.6% at 20 mA. The improved external quantum efficiency of the LEDs can be attributed to the lower residual in-plane stress in the underlying GaN layers.

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confidence: 99%

“…36,37 These trench defects led to decreased internal quantum efficiency of the active region. 23,36,37 Degradation of the InGaN active region severely affects the LED performance. The red InGaN QWs still required optimal growth conditions to suppress the generation of In-rich clusters.…”

mentioning

confidence: 99%

633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress

Iida

Zhuang

Kirilenko

et al. 2020

Applied Physics Letters

116

113

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“…In addition, a weak broadband emission from 475 to 550 nm was observed in the four samples. This emission band is attributed to the trench-related hillock regions because our previous research observed the same luminescence band from the trench defects of the InGaN epilayer but not from the surrounding area without the defects …”

Section: Resultsmentioning

confidence: 68%

“…This emission band is attributed to the trench-related hillock regions because our previous research observed the same luminescence band from the trench defects of the InGaN epilayer but not from the surrounding area without the defects. 37 3. The In composition and strain state in InGaN can be determined according to the relative position of the RLPs between the InGaN layer and the GaN template.…”

Section: Resultsmentioning

confidence: 99%

“…Trenches with different widths can be clearly seen in the hillock-like regions, and the trenches consist of many clustered V-pits with diameter less than 100 nm. The trench defects on the surface of the InGaN epilayer have been characterized and discussed in detail in ref . Clustered V-pits are closely arranged in a curved shape, forming a trench defect.…”

Section: Resultsmentioning

confidence: 99%

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Surface Evolution of Thick InGaN Epilayers with Growth Interruption Time

Wang

Jiang

2021

J. Phys. Chem. C

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Surface morphology of thick In x Ga 1−x N (x ∼ 0.14) epilayers mediated by growth interruption was investigated. The interruption was performed by changing the turn-off time of metal precursor flow during the metal−organic chemical vapor deposition process. For the InGaN layer grown in the continuous mode, the thick InGaN epilayer releases strain by forming a misfit dislocation network through a punch-out process. This is attributed to the presence of excess In adatoms on the growing front. The spiral growth, induced by the screw component of dislocations from the MDs and the underlying GaN, is enhanced in this case. The introduction of pulsed metal precursor flow leads to the lowered relaxation degree, and the misfit strain tends to be released through the formation of trench defects. Prolonging the interruption time from 5 to 10 s caused a decrease in MDs and their related threading segments. The growth mode then turns close to the typical step-flow growth, resulting in a smooth morphology and superior luminescence properties. Further prolonging the interruption time to 15 s, however, causes a reduction in the In composition and an increase in In adatoms. Accordingly, the density of the MD network again increases, making the growth mode deviate from the typical step-flow growth. All these indicate that controlling the In adatoms is crucial to the epitaxy of thick InGaN. Targeted optimization of its growth procedure can reduce strain relaxation and related defects, resulting in superior luminescence properties.

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Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies

Kempisty,

Ahmad,

Strak

et al. 2023

Computational Materials Science

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Reduction of nonradiative recombination in InGaN epilayers grown with periodical dilute hydrogen carrier gas

Cited by 12 publications

References 45 publications

633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress

633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress

Surface Evolution of Thick InGaN Epilayers with Growth Interruption Time

Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies

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