This work investigates the influence of residual stress on the performance of InGaN-based red light-emitting diodes (LEDs) by changing the thickness of the underlying n-GaN layers. The residual in-plane stress in the LED structure depends on the thickness of the underlying layer. Decreased residual in-plane stress resulting from the increased thickness of the underlying n-GaN layers improves the crystalline quality of the InGaN active region by allowing for a higher growth temperature. The electroluminescence intensity of the InGaN-based red LEDs is increased by a factor of 1.3 when the thickness of the underlying n-GaN layer is increased from 2 to 8 lm. Using 8-lm-thick underlying n-GaN layers, 633-nm-wavelength red LEDs are realized with a light-output power of 0.64 mW and an external quantum efficiency of 1.6% at 20 mA. The improved external quantum efficiency of the LEDs can be attributed to the lower residual in-plane stress in the underlying GaN layers.

Here we report InGaN-based red light-emitting diodes (LEDs) grown on ( 2 ¯ 01 ) β-Ga2O3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures were employed to improve the crystalline-quality of the InGaN active region. A bare LED showed that peak wavelength, light output power, and external quantum efficiency were 665 nm, 0.07 mW, and 0.19% at 20 mA, respectively. As its forward voltage was 2.45 V at 20 mA, the wall-plug efficiency was 0.14%. The characteristic temperature of the LEDs was 222 K at 100 mA evaluated from the temperature dependence of electroluminescence.

An excellent hybrid III‐nitride/nanocrystal nanohole light‐emitting diode (h‐LED) has been developed utilizing nonradiative resonant energy transfer (NRET) between violet/blue emitting InGaN/GaN multiple quantum wells (MQWs) and various wavelength emitting nanocrystals (NCs) as color‐conversion mediums. InGaN/GaN MQWs are fabricated into nanoholes by soft nanoimprint lithography to minimize the separation between MQWs and NCs. A significant reduction in the decay lifetime of excitons in the MQWs of the hybrid structure has been observed as a result of the NRET from the nitride emitter to NCs. The NRET efficiency of the hybrid structures is obtained from the decay curves, as high as 80%. Moreover, a modified Förster formulation has exhibited that the exciton coupling distance in the hybrid structures is less than the Förster's radius, demonstrating a strong coupling between MQWs and NCs. Finally, based on a systemic optimization for white emission indexes, a series of hybrid ternary complementary color h‐LEDs have been demonstrated with a high color rendering index, up to 82, covering the white light emission at different correlated color temperatures ranging from 2629 to 6636 K, corresponding to warm white, natural white, and cold white.

Herein, we propose a new strategy of maskless lithographic approach to fabricate micro/nano-porous structures by phase separation of polystyrene (PS)/Polyethylene glycol (PEG) immiscible polymer blend. Its simple process only involves a spin coating of polymer blend followed by a development with deionized water rinse to remove PEG moiety, which provides an extremely facile, low-cost, easily accessible nanofabrication method to obtain the porous structures with wafer-scale. By controlling the weight ratio of PS/PEG polymer blend, its concentration and the spin-coating speed, the structural parameters of the porous nanostructure could be effectively tuned. These micro/nano porous structures could be converted into versatile functional nanostructures in combination with follow-up conventional chemical and physical nanofabrication techniques. As demonstrations of perceived potential applications using our developed phase separation lithography, we fabricate wafer-scale pure dielectric (silicon)-based two-dimensional nanostructures with high broadband absorption on silicon wafers due to their great light trapping ability, which could be expected for promising applications in the fields of photovoltaic devices and thermal emitters with very good performances, and Ag nanodot arrays which possess a surface enhanced Raman scattering (SERS) enhancement factor up to 1.64 × 108 with high uniformity across over an entire wafer.