Reduction of self-heating effect in (Ga)ZnO thin film transistor

This article deals with an investigation of the effect of oxygen content on optical and structural properties of ZnO films. Zinc oxide films were deposited with the DC reactive magnetron sputtering process on Si(100) and glass substrates. ZnO films were elaborated at different oxygen flow rates from (O 2 ) 12 to 35 sccm. The evolution of optical and structural properties as a function of O 2 was investigated by X-ray diffraction, Profilometer, Field Emission Scanning Electron Microscopy (FESEM) and ultraviolet-visible. By increasing O 2 , the crystallite size increases from 20 to 27 nm, which leads to an enlargement in the ZnO band gap from 3.18 to 3.30 eV. At 30 sccm of O 2 , the films present a significant improvement in the band gap (3.30 eV). The results reveal that with increasing O 2 , all films show a high crystallinity in the wurtzite phase and present a (002)ZnO preferential orientation along the c-axis. ZnO exhibited a good self-texture.

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Atomic layer deposition of ZnO thin films using a liquid cyclopentadienyl-based precursor

Mizutani,

Mizui,

Takahashi

et al. 2024

Journal of Vacuum Science &Amp; Technology A

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A new compound, bis(n-propyltetramethylcyclopentadienyl)zinc [Zn(Cppm)2], was synthesized as a Zn precursor for atomic layer deposition (ALD) of ZnO films. The compound is a liquid at room temperature and is thermally stable below ∼230 °C. Although the vapor pressure of this precursor is low (1 Torr at 99 °C), it is sufficient for the material to be used in ALD. ZnO thin films were deposited on p-type Si(100) wafers at 200 °C by ALD using the precursor. Three types of ZnO films were grown using different oxidants: (a) O2 plasma, (b) H2O, and (c) H2O followed by O2 plasma. The growth rates expressed in the growth per cycle were (a) 0.13 nm/cycle, (b) 0.07 nm/cycle, and (c) 0.10 nm/cycle, respectively, and all of the resultant films had a hexagonal wurtzite structure. Cross-sectional transmission electron microscopy revealed that, although all of the ZnO films were crystalline. X-ray diffraction analysis determined that the (002) orientation was dominant when the oxidant was H2O, and that the (103) orientation was observed when O2 plasma was used. All of the obtained films were nearly stoichiometric. Using H2O as an oxidant, very small amounts of impurities remain in the film. However, high-purity ZnO films can be deposited using H2O followed by O2 plasma as oxidants.

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Reduction of self-heating effect in (Ga)ZnO thin film transistor

Cited by 4 publications

References 18 publications

Effect of oxygen pressure on GZO film as active layer of the TFT fabricated at room temperature

Effect of oxygen pressure on GZO film as active layer of the TFT fabricated at room temperature

Oxygen effect on structural and optical properties of zinc oxide

Atomic layer deposition of ZnO thin films using a liquid cyclopentadienyl-based precursor

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