An inductively coupled plasma source with internal‐type linear inductive antennas named as “internal multiple U‐type antenna” was developed for the substrate size of 2 300 × 2 000 mm2 and the characteristics of the large‐area inductive plasma source were investigated. High density plasmas on the order of 1.18 × 1011 cm−3 could be obtained at the pressure of 15 mTorr Ar gas and the RF power of 8 kW with good plasma stability. In addition, by using variable capacitors at the end of the antenna, lower antenna voltage and more uniform antenna voltage distribution could be obtained. When a photoresist film was etched using O2 plasma with 8 kW RF power, an etch uniformity less than 11% could be obtained using the multiple U‐type antenna on the substrate size larger than 7th generation (2 200 × 1 870 mm2).