2002
DOI: 10.1063/1.1497440
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Reduction of the light-onset voltage of light-emitting diodes based on a soluble poly(p-phenylene vinylene) by grafting polar molecules onto indium–tin oxide

Abstract: Stability of the interface between indium-tin-oxide and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) in polymer light-emitting diodes

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Cited by 19 publications
(9 citation statements)
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“…[8][9][10][11][12][13] Several strategies have been developed to tune the alignment between the metal Fermi level and the molecular states and, thus, to facilitate carrier-injection across metal-organic interfaces. These include the application of polar, covalently bound self-assembled monolayers, [14][15][16][17][18][19][20][21][22] redox doping of the organic layers, 23,24 or the deposition of ͑sub͒monolayers of strong electron acceptors [25][26][27][28][29] ͑or donors 1,13,30,31 ͒, which form charge-transfer complexes with the underlying metal. [32][33][34][35][36][37][38] The latter are of particular relevance for the present study.…”
Section: Introductionmentioning
confidence: 99%
“…[8][9][10][11][12][13] Several strategies have been developed to tune the alignment between the metal Fermi level and the molecular states and, thus, to facilitate carrier-injection across metal-organic interfaces. These include the application of polar, covalently bound self-assembled monolayers, [14][15][16][17][18][19][20][21][22] redox doping of the organic layers, 23,24 or the deposition of ͑sub͒monolayers of strong electron acceptors [25][26][27][28][29] ͑or donors 1,13,30,31 ͒, which form charge-transfer complexes with the underlying metal. [32][33][34][35][36][37][38] The latter are of particular relevance for the present study.…”
Section: Introductionmentioning
confidence: 99%
“…In the S/D electrodes and semiconductor interface, contact resistance will affect the carrier movement through the interface and low barrier height contact is needed. [40][41][42][43][44]47,[61][62][63][64][65][66][67][68][69][70][71][72][73] With the decreasing device dimensions, the contact resistance as a part of the total device resistance will dominate over the channel resistance, and therefore the speed of organic integrated circuits may be limited by the contact resistance, not by the intrinsic carrier mobility of the organic semiconductor. 73 Unlike the field effect transistors based on single-crystalline, polycrystalline, or hydrogenated amorphous silicon, the source and drain contacts in OTFTs are not easily optimized by the conventional processes at high temperatures, such as semiconductor doping or metal alloying.…”
Section: Introductionmentioning
confidence: 99%
“…Another kind of widely used conducting glass, indium−tin oxide (ITO), has attracted many researchers to take great efforts to modify its surface for higher performance in organic light-emitting diodes (OLEDs) or organic solar cells . For instance, a silanization reaction and formation , of self-assembled monolayers (SAMs) are carried out to change the ITO electrode's work function. However, few groups pay attention to the modification of FTO in DSCs.…”
Section: Introductionmentioning
confidence: 99%