Reduction of the thermal impedance of vertical-cavity surface-emitting lasers after integration with copper substrates

Mathine, D.; Nejad, H. Baghban Asghari; Allee, David R.; Droopad, R.; Maracas, G. N.

doi:10.1063/1.118140

Cited by 30 publications

(14 citation statements)

References 4 publications

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“…VCSELs with 0-μm heatsink overlap demonstrated R th of about 1.32ºC/mW, whereas VCSELs with 4-μm heatsink overlap exhibited reduced R th value of approximately 1.02ºC/mW, which corresponds to a 29% decrease in the thermal resistance. Attaching top-emitting 980-nm VCSELs to a copper substrate after substrate removal also demonstrated about a 22% decrease in R th [15]. Using a 5-μm of Au in addition to thinning the substrate to about 100nm, resulted in about a 34% reduction in R th for the top-emitting devices reported in [20].…”

Section: Resultsmentioning

confidence: 95%

“…Devices with 0-μm heatsink overlap demonstrated a maximum optical power of 2.4mW at I bias =17I th , whereas devices with 4-μm heatsink overlap exhibited an increased maximum optical power of 4.1mW at I bias =23I th , which represents a 73% increase in the maximum optical power. Previous publications presented enhancements in top-emitting VCSELs with 980-nm wavelength P max of approximately 107% achieved by attaching 20-μm oxide aperture diameter VCSELs to a copper substrate after substrate removal [15]. In [13], 980-nm bottom-emitting VCSEL demonstrated about a 60% increase in P max using 8.5-μm of plated Au on 120x120μm 2 pads around 21-μm pillars as heatsinks.…”

Section: Resultsmentioning

confidence: 96%

“…Fig. 4 presents a summary of previously published R th of VCSELs that were realized using different techniques [4,6,11,[13][14][15][20][21][22]. Using the measured R th values, the VCSEL active region temperature was estimated as described in [14].…”

Section: Resultsmentioning

confidence: 99%

“…Caused by their small size and high thermal resistivity of the distributed Bragg reflectors (DBRs), the considerable self-heating at elevated bias current (I bias ) necessary for higher emitted optical power and/or modulation speeds increases the carrier leakage, threshold gain, and nonradiative recombination in addition to reducing the gain and differential gain. Accordingly, an early thermal rollover of the emitted optical power and saturation of the modulation bandwidth characteristics is observed [15,16]. Therefore, more effective heat-dissipation approaches are necessary to diminish the VCSELs' high thermal resistance and decrease the effect of high bias current on internal VCSEL temperature, which should advance their output characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…In addition to intrinsic laser dynamics [6,7] and electrical parasitic circuit effects [6,[8][9][10], self heating is one of the aspects that presently hinders the frequency modulation bandwidth and emitted optical power of VCSEL technology [6,[11][12][13][14][15]. Caused by their small size and high thermal resistivity of the distributed Bragg reflectors (DBRs), the considerable self-heating at elevated bias current (I bias ) necessary for higher emitted optical power and/or modulation speeds increases the carrier leakage, threshold gain, and nonradiative recombination in addition to reducing the gain and differential gain.…”

Section: Introductionmentioning

confidence: 99%

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Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power

Al-Omari

Alias

Lear

2012

2012 IEEE 3rd International Conference on Photonics

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Top-emitting, oxide-confined, polyimideplanarized 980-nm VCSELs with copper-plated heatsinks were fabricated and characterized. Increasing the plated heatsink radius from 0-μ μ μ μm to 4-μ μ μ μm larger than the mesa diameter for lasers with 8-μ μ μ μm oxide aperture diameter reduced the measured thermal impedance, increased the maximum bias current density, and increased the maximum output optical power achieved by a 29%, 37%, and 73%, respectively. VCSELs with oxide aperture diameter and heatsink overlap of 8-μ μ μ μm and 4-μ μ μ μm, respectively, demonstrated 17ºC decrease in the internal device temperature (i.e. active region temperature) at the maximum output optical power. Devices with similar mesa diameters of 26-μ μ μ μm and different heatsink overlaps exhibited a threshold bias current and a total series resistance of (630±4%)μ μ μ μA and ~95Ω Ω Ω Ω, respectively.

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Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power

Al-Omari

Alias

Lear

2012

2012 IEEE 3rd International Conference on Photonics

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High‐Performance Thin‐Film VCSELs Integrated with a Copper‐Plated Heatsink

Moon

Yun

Kwon

et al. 2023

Adv Materials Inter

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High‐performance continuous‐wave (CW) vertical‐cavity surface‐emitting lasers (VCSELs) rely on efficient thermal management for which top‐emitting 930 nm thin‐film VCSELs are integrated with a copper‐plated heatsink by using a double‐transfer technique, exhibiting the low‐power consumption, high‐power, and temperature‐stable VCSEL operation. In this study, the top‐emitting 930 nm thin‐film VCSEL structures, including the highly n‐doped GaAs ohmic and lattice‐matched InGaP etch‐stop layers, are epitaxially grown via a low‐pressure metalorganic chemical vapor deposition (LP‐MOCVD) system. The electrical and optical properties of the substrate‐removal thin‐film VCSELs are investigated under CW operation, compared to those of the bulk‐type VCSELs onto the n‐GaAs substrates. The differential series resistance (85.92 Ω) of the thin‐film VCSEL is 9.16% lower than 94.59 Ω of the bulk‐type VCSEL onto the n‐GaAs substrates. The thermal resistance (607 K W−1) of the thin‐film VCSEL is 46.33% lower than 1131 K W−1 of the bulk‐type VCSEL, by which the maximum peak power (11.70 mW) of the thin‐film VCSEL at 24 mA is 12.07% higher than 10.44 mW of the bulk‐type VCSEL at 22.40 mA under room temperature (25 °C).

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Compliant, Heterogeneously Integrated GaAs Micro‐VCSELs towards Wearable and Implantable Integrated Optoelectronics Platforms

Kang

Lee

et al. 2014

Advanced Optical Materials

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optical communication, [ 2,3 ] data scanning and sensing, [ 4,5 ] infrared illumination, [ 6,7 ] laser printing, [ 8,9 ] and others. [ 10,11 ] More recently, VCSELs have been also rapidly emerging as a coherent excitation light source for biomedical detection and imaging. [ 12,13 ] Despite such increasingly versatile utilities, established modes of exploiting VCSELs have been intrinsically limited as they rely mainly on devices that operate on their native growth substrates, which is attributed to diffi culties in materials growth, processing, and assembly methods that are not readily compatible with programmable distribution on unusual substrates over large area, as well as heterogeneous integration with dissimilar materials and devices. [ 14,15 ] Furthermore, VCSELs, typically built on rigid and brittle semiconductor wafers, restricted their capacity to integrate effectively onto systems with a soft, non-planar interface, which can be extremely useful for many unconventional applications. [ 16,17 ] Whereas a number of different approaches such as fl ip-chip integration, [ 18,19 ] wafer bonding, [20][21][22] fl uidic assembly, [ 23,24 ] epitaxial lift-off (ELO), [ 25,26 ] and appliqué [ 14,27,28 ] have been developed for integrating VCSELs on non-native substrates with their own advantages, none of them are suitable for commercial implementation and for achieving systems that satisfy all of above-described features due to many diffi cult and persistent challenges including little or no control over areal coverage and spatial layout, compromised performance during the fabrication and assembly (e.g., etching or wafer bonding), poor cost-effectiveness and low throughput, as well as limited choices of substrate materials. Although the conventional ELO process has been successfully used for solar cells and other optoelectronic devices in the past decades, [ 16,[29][30][31][32] its application to VCSELs remained great challenges owing to signifi cant damages in active materials such as mirror layers and quantum wells during the sacrifi cial removal of AlAs, and resulting strongly deteriorated device performance. Furthermore, all of aforementioned approaches are lack of capabilities to manipulate individual or selective sets of microscale VCSELs with customizable device layouts to meet specifi c requirements of applications. Here we present an approach to overcome all of Vertical cavity surface emitting lasers (VCSELs) represent a ubiquitous light source with unique performance characteristics that excel for edge-emitting lasers or light-emitting diodes. VCSELs are available, however, mostly on growth wafers in rigid, planar formats over restricted areas, thereby frustrating their use for applications that benefi t greatly from unconventional design options including large-scale, programmable assemblies on unusual substrates, hybrid integration with dissimilar materials and devices, or mechanically compliant constructions. Here, materials design and fabrication strategies are presented to overcome these limitations of ...

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Reduction of the thermal impedance of vertical-cavity surface-emitting lasers after integration with copper substrates

Cited by 30 publications

References 4 publications

Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power

Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power

High‐Performance Thin‐Film VCSELs Integrated with a Copper‐Plated Heatsink

Compliant, Heterogeneously Integrated GaAs Micro‐VCSELs towards Wearable and Implantable Integrated Optoelectronics Platforms

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