Refinement of the 2<i>H</i> GaS β-type

Kuhn, A.; Chévy, A.; Chevalier, R.

doi:10.1107/s0567740876004445

Cited by 109 publications

(60 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…For the GaX and InX compounds the lattice parameters and bulk bandgaps obtained are consistent with prior experimental 65,66 and theoretical studies 3,4,67 of the bulk crystal structure and electronic band structures.…”

Section: A Iii-vi Compounds Gax and Inx (X = S Se)supporting

confidence: 75%

Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

Wickramaratne

Zahid²,

Lake

2015

Journal of Applied Physics

140

114

View full text Add to dashboard Cite

The valence band of a variety of few-layer, two-dimensional materials consists of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a 'Mexican hat' or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III-VI materials GaS, GaSe, InS, InSe, for Bi 2 Se 3 , for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III-VI materials and Bi 2 Se 3 is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects.

show abstract

Section: A Iii-vi Compounds Gax and Inx (X = S Se)supporting

confidence: 75%

Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

Wickramaratne

Zahid²,

Lake

2015

Journal of Applied Physics

140

114

View full text Add to dashboard Cite

show abstract

“…* La structure est bien de la forme usuelle du sulfure GaS 2Hfl affin+e par Kuhn, Chevy & Chevalier (1976a). L'empilement des couches (Se-Ga-Ga-Se) 2 se r+p&e ~.…”

Section: Discussion Les Coordonn6es Atomiques Relatives Et Les Facteunclassified

Affinement sur monocristal de la structure du polytype 2H du séléniure de gallium GaSe forme β

Bénazeth¹,

Dung²,

Guittard³

et al. 1988

Acta Crystallogr C

View full text Add to dashboard Cite

“…Bulk GaS and GaSe are layered semiconductors with potential applications in optoelectronic devices [24,25]. The excitation gaps are tunable via either uniaxial or hydrostatic strain according to experiments [26].…”

mentioning

confidence: 99%

“…The same value of R mt ¼ 2:0 bohr is used for the S and Se atoms, while 2.2 bohr applies to Ga. We set R mt K max ¼ 7:0 and l max ¼ 10, and employ a 16 Â 16 Â 3 k mesh and the same exchange correlation functional [31] in all our calculations. The experimental lattice constants are used for the unstrained structure of both -GaS (a ¼ 3:587 # A, c ¼ 15:492 # A) [25] and -GaSe (a ¼ 3:752 # A, c ¼ 15:95 # A) [24]. Strain is simulated by variation of a for constant cell volume.…”

mentioning

confidence: 99%