Employing a hybrid density functional theory, we reveal the origin of the large absorption coefficient in BaSi 2 , which is roughly two to eighty times larger at ħω % E g = 0.5 eV than other conventional absorbers such as Si, GaAs, CdTe, CuInSe 2 , and Cu 2 ZnSnS 4 . This is explained on the basis of the electronic band structure of BaSi 2 , whereby the lowest conduction band (CB) has a small dispersion, owing to the localized Ba-d states, resulting in flat bands. Consequently, these flat bands contribute to a wide range of optical absorption in the low-energy region and lead to high optical activity in BaSi 2 .