2002
DOI: 10.1063/1.1523650
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Reflectance difference spectroscopy of an ultrathin indium arsenide layer on indium phosphide (001)

Abstract: Articles you may be interested inA rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution Rev.Reflectance anisotropy spectroscopy study of the surface reconstructions of decapped InP(001)A model system has been created which allows the surface and bulk contributions to the reflectance difference spectrum to be distinguished. In particular, an indium arsenide film, less than 10 Å thick, has been grown on indium phosphide ͑001͒. Reflectance differe… Show more

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Cited by 4 publications
(2 citation statements)
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“…The technological potential of III-V materials based on InP(001) has resulted in numerous applications of RAS to the study of the growth and character of such materials. RAS has been used to study the growth of InP(001) [218][219][220], the nature of InP(001) surfaces following growth and annealing [190,[221][222][223][224][225] the oxidation process [226] and the interface between InAs and InP(001) [227]. First principles calculations of the RAS of the In rich InP(001)-(2×4) surface are in good agreement with experimental findings [114,167].…”
Section: Inp(001)mentioning
confidence: 52%
“…The technological potential of III-V materials based on InP(001) has resulted in numerous applications of RAS to the study of the growth and character of such materials. RAS has been used to study the growth of InP(001) [218][219][220], the nature of InP(001) surfaces following growth and annealing [190,[221][222][223][224][225] the oxidation process [226] and the interface between InAs and InP(001) [227]. First principles calculations of the RAS of the In rich InP(001)-(2×4) surface are in good agreement with experimental findings [114,167].…”
Section: Inp(001)mentioning
confidence: 52%
“…한편, 등방성 피복층에 결함이 발생하면 그 피복층은 이방 성을 나타내는데, 이 구조적 이방성에 동반되는 광학이방성 을 측정하여 구조적 결함 여부를 판단할 수 있다 [3] . 시료표면 에서의 반사광의 세기를 시료 방위각의 함수로 측정하여 표 면 이방성을 정밀하게 측정 분석하는 기법은 RAS(Reflectance Anisotropy Spectroscopy), RDS(Reflectance Difference Spectroscopy) 또는 OCD(Optical Critical Dimension) 등으로 표현 되며 Aspnes 등에 의해 입방구조 반도체 결정의 미세 표면 이방성 연구에 적용된 이래 III-V족 화합물 반도체 등의 표 면이방성 해석과 관련하여 많은 연구결과들이 발표되었다 [4][5][6][7][8][9] . 이들 방법에서는 위상변조방식인 PEM(Photoelastic modulator) 을 사용하며 이방성측정의 민감도를 최대로 하기 위하여 편 광자의 투과축을 시료의 광축과 ±45도의 각도로 유지한다.…”
Section: Figunclassified