Articles you may be interested inA rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution Rev.Reflectance anisotropy spectroscopy study of the surface reconstructions of decapped InP(001)A model system has been created which allows the surface and bulk contributions to the reflectance difference spectrum to be distinguished. In particular, an indium arsenide film, less than 10 Å thick, has been grown on indium phosphide ͑001͒. Reflectance difference spectra of the InAs/InP surfaces were collected and compared to those of InP and InAs. It was found that the InAs/InP heterostructures exhibited electronic transitions between surface states characteristic of InAs ͑001͒, while retaining the surface-perturbed bulk transitions characteristic of InP ͑001͒. Furthermore, the optical anisotropy arising from the arsenic dimer bonds was shifted 0.2 eV higher for InAs/InP compared to that for InAs. This shift is proportional to 1/a 2 , where a is the bulk lattice constant.