Reflection high-energy electron-diffraction and photoemission spectroscopy study of GaAs(001) surface modified by Se adsorption

Takatani, Shinichiro; Kikawa, T.; Nakazawa, Masatoshi

doi:10.1103/physrevb.45.8498

Cited by 84 publications

(46 citation statements)

References 26 publications

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“…The different activation energies of these defects may lead to different critical thicknesses. Another reason for the variation of hc may be the different lattice constants of GaAs (5.65 Å) and Ga2 Se3 (5.43 Å) [4] yielding a decreased lattice misfit between the substrate and the ZnSe layer when the formation of a Ga2Se3 interface layer is suppressed.…”

Section: Resultsmentioning

confidence: 99%

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Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs

et al. 1996

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We investigated the GaAs/ZnSe interface and the influence of the Ga 2 Se3 formation at the GaAs/ZnSe interface on the relaxation of the ZnSe epilayer using reflection high-energy electron diffraction, atomic force microscope, photoluminescence, and X-ray diffraction techniques. An improvement of the surface roughness due to the cleaning of the GaAs substrate with hydrogen excited in a plasma source and a higher critical thickness of GaAs(001)/ZnSe due to the suppression of Ga2 Se3 at the surface was observed.

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Section: Resultsmentioning

confidence: 99%

“…The formation of cubic Ga2Se3 is forced by the exchange of As and Se at the GaAs surface. Ga2Se3 at the surface can be detected by RHEED because of its (2 x 1) reconstruction [4].…”

Section: Resultsmentioning

confidence: 99%

Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs

et al. 1996

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“…These parameters for Ga 3d and As 3d core-level spectra were determined from the Ga 3d and As 3d core-level spectra of the thermal-cleaned reference surface, and agree well with previous determinations. 23,28 The previously reported deconvolution parameters for Se 3d and S 2p were also used. 23,29,30 Table II lists the parameters used for the deconvolution of As 3d, Ga 3d, Se 3d, and S 2p spectra.…”

Section: Core-level Studiesmentioning

confidence: 99%

“…23,28 The previously reported deconvolution parameters for Se 3d and S 2p were also used. 23,29,30 Table II lists the parameters used for the deconvolution of As 3d, Ga 3d, Se 3d, and S 2p spectra. The experimental data are represented by dots and the solid line by the sum of the simulated components of identical line shape.…”

Section: Core-level Studiesmentioning

confidence: 99%

“…In order to develop models of chemical-based passivation on the III-V semiconductor surfaces, detailed measurements of the chemical bonding and Fermi level position on the passivated surface have been undertaken for III-V semiconductors. [23][24][25] In this article, the GaAs͑100͒ surfaces passivated by SeS 2 , using wet chemical techniques, have been studied in detail with high-resolution, core-level photoemission spectroscopy excited with synchrotron radiation source. Core-level spectra exhibiting predominantly either surface or bulk features have been obtained using the tunability of synchrotron radiation source.…”

Section: Introductionmentioning

confidence: 99%

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Chemical bonding and electronic properties of SeS2-treated GaAs(100)

Sun

Seo

O’Brien

et al. 1999

Journal of Applied Physics

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SeS 2 -passivated n-type GaAs ͑100͒ surfaces, formed by treatment of GaAs in SeS 2 :CS 2 solution at room temperature, were studied with high-resolution core-level photoemission spectroscopy excited with synchrotron radiation source. The SeS 2 -treated surface consists of a chemically stratified structure of several atomic layers thickness. Arsenic-based sulfides and selenides reside in the outermost surface layer while gallium-based selenides are adjacent to the bulk GaAs substrate. The shift of the surface Fermi level within the band gap was monitored during controlled thermal annealing, allowing for the identification of the specific chemical entities responsible for the reduction in surface band bending. Arsenic-based species are removed at low annealing temperature with little shift of the Fermi level. Gallium-based selenides are shown to be associated with the unpinning of the surface Fermi level.

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