Reflective electron beam lithography: A maskless ebeam direct write lithography approach using the reflective electron beam lithography concept

Abstract

Multiaxis and multibeam technology for high throughput maskless E-beam lithography J. Vac. Sci. Technol. B 30, 06FC01 (2012); 10.1116/1.4767275 High-current electron optical design for reflective electron beam lithography direct write lithography J. Vac. Sci. Technol. B 28, C6C1 (2010); 10.1116/1.3505130 REBL: A novel approach to high speed maskless electron beam direct write lithographyReflective electron beam litography ͑REBL͒ utilizes several novel technologies to generate and expose lithographic patterns at throughputs that could make ebeam maskless lithography feasible for high volume manufacturing. The REBL program was described in a previous article ͓P. Petric et al., J. Vac. Sci. Technol. B 27, 161 ͑2009͔͒ 2 years ago. This article will review the system architecture and the progress of REBL in the past 2 years. The main technologies making REBL unique are the reflective electron optics, the rotary stage, and the dynamic pattern generator ͑DPG͒. Changes in how these concepts have been implemented in a new design will be discussed. The main disadvantage of today's electron beam direct write is low throughput; it takes many tens of hours to expose a 300 mm wafer today using ebeam lithography. The projected system throughput performance with the integrated technology of the reflective optics, DPG, and a multiple wafer rotary stage will be shown incorporating the performance data for the new column design. C6C10 Petric et al.: Reflective electron beam lithography: A maskless ebeam direct write lithography C6C10 J.

Roadmap on structured light

“…A CMOS-based digital pattern generator module for electrons has been developed [219] for use in reflective electron beam lithography (REBL) [220]. The pattern generator module consists of an array of micron-sized electrostatic mirrors for electrons that selectively reflect or absorb electrons.…”

Fabrication of Pierce‐Type Nanocrystalline Si Electron‐Emitter Array for Massively Parallel Electron Beam Lithography

“…However, etching a trillion transistors on a wafer 300 mm in diameter using one or more electron beams requires too much time, and consequently conventional electron beam lithography is impractical. Parallel electron beam lithography with high throughput using multiple electron beams has been developed in order to resolve this issue [1][2][3][4][5]. If this approach can be made practical, a mask will no longer be needed, allowing development costs and development time to be reduced.…”

Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography

“…However, etching a trillion transistors on a wafer 300 mm in diameter using one or more electron beams requires too much time, and consequently conventional electron beam lithography is impractical. Parallel electron beam lithography with high throughput using multiple electron beams has been developed in order to resolve this issue . If this approach can be made practical, a mask will no longer be needed, allowing development costs and development time to be reduced.…”